(PDF) STC04IE170HV Datasheet - Emitter Switched Bipolar Transistor

Número de pieza	STC04IE170HV
Descripción	Emitter Switched Bipolar Transistor
Fabricantes	ST Microelectronics
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No Preview Available ! STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω Features VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω ■ High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz ■ Squared RBSOA: up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time Application ■ Aux SMPS for three-phase mains Description The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies. 1 234 TO247-4L HV Figure 1. Internal schematic diagrams Table 1. Device summary Order code Marking STC04IE170HV C04IE170HV Package TO247-4L HV June 2009 Doc ID 12676 Rev 3 Packing Tube 1/9 www.st.com 9 1 page STC04IE170HV Figure 8. Base-source ON voltage (hFE = 5) Electrical characteristics Figure 9. Base-source ON voltage (hFE = 10) Figure 10. Inductive load switching time Figure 11. Inductive load switching time (hFE = 5) (hFE = 10) Figure 12. Reverse biased safe operating area Doc ID 12676 Rev 3 5/9 5 Page

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PDF STC04IE170HV Data sheet ( Hoja de datos )