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Número de pieza | XN06435 | |
Descripción | Silicon PNP Epitaxial Transistor | |
Fabricantes | Panasonic Semiconductor | |
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Composite Transistors
XN06435 (XN6435)
Silicon PNP epitaxial planar type
For high-frequency amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SA1022 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
−30
−20
−5
−30
300
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 7W
Internal Connection
45
6
Tr2 Tr1
321
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
hFE ratio *
VBE
ICBO
ICEO
IEBO
hFE
hFE(Small
VCE = −10 V, IC = −1 mA
VCB = −10 V, IE = 0
VCE = −20 V, IB = 0
VEB = −5 V, IC = 0
VCB = −10 V, IE = 1 mA
VCB = −10 V, IE = 1 mA
− 0.7
− 0.1
−100
−10
50 220
0.50 0.99
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common emitter)
/Large)
VCE(sat) IC = −10 mA, IB = −1 mA
− 0.1
fT VCB = −10 V, IE = 1 mA, f = 200 MHz 150
NF VCB = −10 V, IE = 1 mA, f = 5 MHz
2.8
Zrb VCB = −10 V, IE = 1 mA, f = 2 MHz
22
Cre VCE = −10 V, IE = 1 mA, f = 10.7 MHz
1.2
Unit
V
µA
µA
µA
V
MHz
dB
Ω
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: March 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00107BED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet XN06435.PDF ] |
Número de pieza | Descripción | Fabricantes |
XN06435 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
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