(PDF) PM4575J Datasheet - Silicon N-Channel Power MOS FET Module

Número de pieza	PM4575J
Descripción	Silicon N-Channel Power MOS FET Module
Fabricantes	Hitachi Semiconductor
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No Preview Available ! www.DataSheet4U.com PM4575J Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain • Isolated base from Terminal • Suitable for motor driver, switching regulator and etc. DataSheet4 U .com 1 page www.DataSheet4U.com Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 ID = 75 A 6 ID = 37 A 4 ID = 20 A 2 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 0.4 VGS = 10 V 0.3 Pulse Test ID = 37 A 0.2 ID = 75 A 0.1 I D = 20 A 0 –40 0 40 80 120 Case Temperature Tc (°C) PM4575J Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.3 VGS = 10, 15 V 0.1 0.03 0.01 1 3 10 30 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current 100 Ta = –25°C VDS = 10 V Pulse Test 25°C 10 75°C 1 0.1 0.1 1 10 Drain Current ID (A) 100 DataSheet4 U .com 5 5 Page

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PDF PM4575J Data sheet ( Hoja de datos )