(PDF) RTE002P02 Datasheet - 2.5V Drive Pch MOS FET

Número de pieza	RTE002P02
Descripción	2.5V Drive Pch MOS FET
Fabricantes	ROHM Semiconductor
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No Preview Available ! www.DataSheet4U.com Transistors 2.5V Drive Pch MOS FET RTE002P02 RTE002P02 zStructure Silicon P-channel MOS FET zFeatures 1) Low On-resistance. 2) Small package (EMT3). 3) 2.5V drive. zApplications Switching zPackage specifications Package Type Code Basic ordering unit (pieces) RTE002P02 Taping TL 3000 zExternal dimensions (Unit : mm) EMT3 1.6 0.3 (3) 0.7 0.55 (1)Source (2)Gate (3)Drain (2) (1) 0.2 0.2 0.5 0.5 1.0 0.15 Abbreviated symbol : TW zInner circuit (3) (2) ∗1 ∗2 (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits −20 ±12 ±0.2 ±0.4 0.15 150 −55 to +150 Unit V V A A W °C °C zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 Unit °C/W (1) Source (2) Gate (3) Drain 1/2 DataSheet4 U .com 1 page

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PDF RTE002P02 Data sheet ( Hoja de datos )