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PDF STPS80H100TV Data sheet ( Hoja de datos )
| Número de pieza | STPS80H100TV | |
| Descripción | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STPS80H100TV
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
2 x 40 A
100 V
150 °C
0.65 V
FEATURES AND BENEFITS
NEGLIGIBLESWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOODTRADE OFF BETWEEN LEAKAGECUR-
RENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
LOW INDUCTANCE PACKAGE
INSULATED PACKAGE :
Insulated voltage = 2500 V(RMS)
Capacitance = 45 pF
K2 A2
K1 A1
ISOTOPTM
DESCRIPTION
High voltage dual Schottky barrier rectifier
designed for high frequency telecom and
computer Switched Mode Power Supplies
and other power converters.
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequen cy circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
Tstg
Tj
dV/dt
Parameter
Value
Repetitive peak reverse voltage
100
RMS forward current
125
Average forward current
Tc = 120°C
δ = 0.5
Per diode
Per device
40
80
Surge non repetitive forward current tp = 10 ms sinusoidal
700
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
2
Non repetitive peak reverse current tp = 100 µs square
5
Storage temperature range
- 55 to+ 150
Maximum operating junction temperature *
150
Critical rate of rise of reverse voltage
10000
Unit
V
A
A
A
A
A
°C
°C
V/µs
*
:
dPtot
dTj
<
1
Rth(j−a)
thermal runaway condition for a diode on its own heatsink
July 1999 - Ed: 3A
1/4
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