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PDF CY7C1347F Data sheet ( Hoja de datos )
| Número de pieza | CY7C1347F | |
| Descripción | 4-Mbit (128K x 36) Pipelined Sync SRAM | |
| Fabricantes | Cypress Semiconductor | |
| Logotipo |  |
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CY7C1347F
4-Mbit (128K x 36) Pipelined Sync SRAM
Features
Functional Description[1]
• Fully registered inputs and outputs for pipelined oper-
ation
• 128K by 36 common I/O architecture
• 3.3V core power supply
• 2.5V/3.3V I/O operation
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
— 2.6 ns (for 225-MHz device)
— 2.8 ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
— 4.0 ns (for 133-MHz device)
• User-selectable burst counter supporting Intel
Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• JEDEC-standard 100-pin TQFP, 119-pin BGA and
165-pin fBGA packages
• “ZZ” Sleep Mode option and Stop Clock option
• Available in Industrial and Commercial temperature
ranges
The CY7C1347F is a 3.3V, 128K by 36 synchronous-pipelined
SRAM designed to support zero-wait-state secondary cache
with minimal glue logic.
CY7C1347F I/O pins can operate at either the 2.5V or the 3.3V
level, the I/O pins are 3.3V tolerant when VDDQ = 2.5V.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise is 2.6 ns (250-MHz
device)
CY7C1347F supports either the interleaved burst sequence
used by the Intel Pentium processor or a linear burst sequence
used by processors such as the PowerPC®. The burst
sequence is selected through the MODE pin. Accesses can be
initiated by asserting either the Address Strobe from
Processor (ADSP) or the Address Strobe from Controller
(ADSC) at clock rise. Address advancement through the burst
sequence is controlled by the ADV input. A 2-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the
rest of the burst access.
Byte write operations are qualified with the four Byte Write
Select (BW[A:D]) inputs. A Global Write Enable (GW) overrides
all byte write inputs and writes data to all four bytes. All writes
are conducted with on-chip synchronous self-timed write
circuitry.
Logic Block Diagram
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to provide
proper data during depth expansion, OE is masked during the
first clock of a read cycle when emerging from a deselected
state.
A0, A1, A
MODE
ADV
CLK
ADSC
ADSP
BWD
BWC
BWB
BWA
BWE
GW
CE1
CE2
CE3
OE
ADDRESS
REGISTER
2 A[1:0]
Q1
BURST
COUNTER
CLR AND Q0
LOGIC
DQD ,DQPD
BYTE
WRITE REGISTER
DQC ,DQPC
BYTE
WRITE REGISTER
DQB ,DQPB
BYTE
WRITE REGISTER
DQA ,DQPA
BYTE
WRITE REGISTER
ENABLE
REGISTER
PIPELINED
ENABLE
DQD ,DQPD
BYTE
WRITE DRIVER
DQC ,DQPC
BYTE
WRITE DRIVER
DQB ,DQPB
BYTE
WRITE DRIVER
DQA ,DQPA
BYTE
WRITE DRIVER
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
E
DQs
DQPA
DQPB
DQPC
DQPD
INPUT
REGISTERS
ZZ SLEEP
CONTROL
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05213 Rev. *D
Revised April 9, 2004
DataSheet4 U .com
1 page  
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CY7C1347F
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (TCO) is 2.6 ns
(250-MHz device).
The CY7C1347F supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
linear burst sequence is suited for processors that utilize a
linear burst sequence. The burst order is user selectable, and
is determined by sampling the MODE input. Accesses can be
initiated with either the Address Strobe from Processor
(ADSP) or the Address Strobe from Controller (ADSC).
Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW[A:D]) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. ADSP is ignored if
CE1 is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE1, CE2, CE3 are all asserted active, and (3) the write signals
(GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1
is HIGH. The address presented to the address inputs (A[16:0])
is stored into the address advancement logic and the Address
Register while being presented to the memory core. The corre-
sponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the Output Register and onto
the data bus within 2.6 ns (250-MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always three-stated during the first cycle of the access. After
the first cycle of the access, the outputs are controlled by the
OE signal. Consecutive single read cycles are supported.
Once the SRAM is deselected at clock rise by the chip select
and either ADSP or ADSC signals, its output will three-state
immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and (2)
CE1, CE2, CE3 are all asserted active. The address presented
to A[16:0] is loaded into the Address Register and the address
advancement logic while being delivered to the RAM core. The
write signals (GW, BWE, and BW[A:D]) and ADV inputs are
ignored during this first cycle.
ADSP-triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs and DQPs inputs is written into the
corresponding address location in the RAM core. If GW is
HIGH, then the write operation is controlled by BWE and
BW[A:D] signals. The CY7C1347F provides byte write
capability that is described in the Write Cycle Description table.
Asserting the Byte Write Enable input (BWE) with the selected
Byte Write (BW[A:D]) input will selectively write to only the
desired bytes.
Bytes not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations.
Because the CY7C1347F is a common I/O device, the Output
Enable (OE) must be deasserted HIGH before presenting data
to the DQs and DQPs inputs. Doing so will three-state the
output drivers. As a safety precaution, DQs and DQPs are
automatically three-stated whenever a write cycle is detected,
regardless of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following condi-
tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active,
and (4) the appropriate combination of the write inputs (GW,
BWE, and BW[A:D]) are asserted active to conduct a write to
the desired byte(s). ADSC-triggered write accesses require a
single clock cycle to complete. The address presented to
A[16:0] is loaded into the address register and the address
advancement logic while being delivered to the RAM core. The
ADV input is ignored during this cycle. If a global write is
conducted, the data presented to the DQs and DQPs is written
into the corresponding address location in the RAM core. If a
byte write is conducted, only the selected bytes are written.
Bytes not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations.
Because the CY7C1347F is a common I/O device, the Output
Enable (OE) must be deasserted HIGH before presenting data
to the DQs and DQPs inputs. Doing so will three-state the
output drivers. As a safety precaution, DQs and DQPs are
automatically three-stated whenever a write cycle is detected,
regardless of the state of OE.
Burst Sequences
The CY7C1347F provides a two-bit wraparound counter, fed
by A[1:0], that implements either an interleaved or linear burst
sequence. The interleaved burst sequence is designed specif-
ically to support Intel Pentium applications. The linear burst
sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user-selectable
through the MODE input.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, CE3, ADSP, and ADSC must
remain inactive for the duration of tZZREC after the ZZ input
returns LOW.
Document #: 38-05213 Rev. *D
Page 5 of 19
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Switching Waveforms
Read Cycle Timing[17]
tCYC
CY7C1347F
CLK
ADSP
ADSC
ADDRESS
GW, BWE,
BW[A:D]
CE
ADV
OE
Data Out (Q)
tCH tCL
t
ADS
tADH
tADS tADH
tAS tAH
A1
A2
tWES tWEH
A3
Burst continued with
new base address
tCES tCEH
tADVS tADVH
Deselect
cycle
High-Z
tCLZ
tCO
tOEHZ
Q(A1)
Single READ
ADV
suspends
burst.
tOEV tCO
tOELZ
tDOH
Q(A2) Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
BURST READ
tCHZ
Q(A2) Q(A2 + 1)
Burst wraps around
to its initial state
DON’T CARE UNDEFINED
Notes:
17. On this diagram when CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH,CE1 is HIGH or CE2 is LOW or CE3is HIGH.
18. Full width write can be initiated by either GW LOW, or by GW HIGH, BWE LOW and BW[A:D] LOW.
Document #: 38-05213 Rev. *D
DataSheet4 U .com
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| PDF Descargar | [ Datasheet CY7C1347F.PDF ] | |
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