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Número de pieza | STB100NF03L-03 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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STB100NF03L-03 STP100NF03L-03
STB100NF03L-03-1
N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS RDS(on)
ID
STB100NF03L-03
STP100NF03L-03
STB100NF03L-03-01
30 V
30 V
30 V
<0.0032 Ω
<0.0032 Ω
<0.0032 Ω
100 A
100 A
100 A
s TYPICAL RDS(on) = 0.0026 Ω
s LOW THRESHOLD DRIVE
s 100% AVALANCHE TESTED
s LOGIC LEVEL DEVICE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
1
D2PAK
TO-263
(Suffix “T4”)
123
I2PAK
TO-262
(Suffix “-1”)
3
2
1
TO-220
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID(1)
Drain Current (continuous) at TC = 25°C
ID(1)
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS(2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) Current Limited by Package
February 2003
.
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
± 16
100
100
400
300
2
1.9
-55 to 175
(2) Starting Tj = 25 oC, IAR = 50A, VDD = 50V
Unit
V
V
V
A
A
A
W
W/°C
J
°C
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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
..
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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
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11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet STB100NF03L-03.PDF ] |
Número de pieza | Descripción | Fabricantes |
STB100NF03L-03 | N-CHANNEL POWER MOSFET | ST Microelectronics |
STB100NF03L-03-1 | N-CHANNEL POWER MOSFET | ST Microelectronics |
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