(PDF) MS2092 Datasheet - RF & MICROWAVE TRANSISTORS

Número de pieza	MS2092
Descripción	RF & MICROWAVE TRANSISTORS
Fabricantes	Advanced Power Technology
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No Preview Available ! www.DataSheet4U.com MS2092 RF & MICROWAVE TRANSISTORS DESCRIPTION The MS2092 is an internally matched, common base silicon bipolar device optimized pulsed application in the 600 – 750 MHz frequency range. Housed in the industry standard AMPAC™ metal/ceramic package, this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability. KEY FEATURES § Refractory/Gold Metallization § Internal Input Matching § Metal/Ceramic Hermetic Package § POUT = 440 W Min. § GP = 7.0 dB Gain APPLICATIONS/BENEFITS § Avionics Applications Symbol PDISS IC VCC TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Parameter Value Power Dissipation* (TC 75°C) Device Current* 1500 32.0 Collector-Supply Voltage* 55 Junction Temperature 200 Storage Temperature -65 to +200 Unit W A V °C °C RTH(j-c) THERMAL DATA Junction-Case Thermal Resistance * Applies only to rated RF amplifier operation 0.13 °C/W MS2092.PDF 2-10-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct DataSheet4 U .com Page 1 1 page

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PDF MS2092 Data sheet ( Hoja de datos )