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PDF SMBJ3V3 Data sheet ( Hoja de datos )
| Número de pieza | SMBJ3V3 | |
| Descripción | Surface Mount TRANSZORB Transient Voltage Suppressors | |
| Fabricantes | Vishay Siliconix | |
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SMBJ3V3
New Product Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Unidirectional polarity only
• Peak pulse power: 600 W (10/1000 µs)
• Excellent clamping capability
• Very fast response time
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-214AA (SMBJ)
TYPICAL APPLICATIONS
MAJOR RATINGS AND CHARACTERISTICS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
specifically for protecting 3.3 V supplied sensitive
equipment against transient overvoltages.
V(BR)
PPPM
IFSM
Tj max.
3.3 V
600 W
60 A
175 °C
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Epoxy meets UL 94V-0 flammability rating
DataShee
Terminals: Matte tin plated leads, solderable per
DataSheet4UJ.c-SomTD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation (1,2)
Peak pulse current with a 10/1000 μs waveform (see Fig. 1)
Peak pulse current with a 8/20 waveform (see Fig. 1)
Non repetitive peak forward surge current 8.3 ms single half sine-wave(2)
Power dissipation on infinite heatsink, TL = 75 °C
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 1
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
PPPM
IPPM
IPPM
IFSM
PM(AV)
TJ, TSTG
VALUE
600
50
200
60
5
- 65 to + 175
UNIT
W
A
A
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V(BR) AT IT
MIN
MAXIMUM
REVERSE
LEAKAGE
CURRENT
IR AT VWM
MAX
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPPM
10/1000 µs
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPPM
8/20 µs
V mA µA V V A V A
SMBJ3V3
DataSheet4U.com
KC
4.1 1.0 200 3.3 7.3 50 10.3 200
Document Number 88940
08-Sep-06
TYPICAL
TEMP.
COEFFICIENT
OF V(BR)
TYPICAL
JUNCTION
CAPACITANCE
CJ AT 0 V,
(%/°C)
- 5.3
1 MHz
pF
5200
www.vishay.com
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMBJ3V3.PDF ] | |
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