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PDF STB80NF55L-06 Data sheet ( Hoja de datos )
| Número de pieza | STB80NF55L-06 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STB80NF55L-06
N - CHANNEL 55V - 0.005 Ω - 80A D2PAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on )
ID
STB80NF55L-06 55 V < 0.0065 Ω 80 A
s TYPICAL RDS(on) = 0.005 Ω
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
3
1
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
D2PAK
TO-263
(Suffix ”T4”)
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
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s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
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ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
55
55
VG S
ID
ID
I DM ( •)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
± 20
80
57
320
210
Derating Factor
1.4
EAS (1) Single Pulse Avalanche Energy
1
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) starting Tj = 25 oC, ID =40A , VDD = 30V
October 1999
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Unit
V
V
V
A
A
A
W
W /o C
J
oC
oC
1/8
1 page  
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Normalized Gate Threshold Voltage vs
Temperature
STB80NF55L-06
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STB80NF55L-06.PDF ] | |
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