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PDF MS2210 Data sheet ( Hoja de datos )

Número de pieza MS2210
Descripción RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! MS2210 Hoja de datos, Descripción, Manual

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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
255 MHz BANDWIDTH
GOLD METALLIZATION
EMITTER SITE BALLASTED
Pout = 300W MINIMUM
Gp = 7.0 dB
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
15:1 VSWR CAPABILITY
MS2210
DESCRIPTION:
The MS2210 avionics power transistor is a broadband, high peak
pulse power device specifically designed for avionics applications
requiring broad bandwidth with moderate dutDyactaySclheeeatn4dU.pcoumlse width
constraints such as ground/ship DME/TACAN. The MS2210 is also
designed for specialized applications where reduced power is
provided under pulse formats utilizing short pulse widths and high
burst or overall duty cycles
This device is capable of withstanding 15:1 VSWR mismatch load
conditions at any phase angle under full rated conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance*
Applies only to rated RF operation.
Value
940
24
50
+200
- 65 to + 200
0.16
DataShee
Unit
W
A
°C
°C
°C/W
MS2210.PDF 4-15-03
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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