(PDF) 2SA2154MFV Datasheet - General Purpose Amplifier Applications

Número de pieza	2SA2154MFV
Descripción	General Purpose Amplifier Applications
Fabricantes	Toshiba
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No Preview Available ! www.DataSheet4U.com 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications • High voltage and high current : VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026MFV • Lead (Pb) - free Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −50 V −50 V −5 V −150 mA −30 mA 150* mW DataSheet4U.com 150 °C −55~150 °C * : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm) Mount Pad Dimensions (Reference) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Unit: mm Unit: mm 1.2 ± 0.05 0.80 ± 0.05 1 1 3 2 VESM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-1L1A Weight: 0.0015 g (typ.) DataShee DataSheet4U.com DataSheet4 U .com 1 2005-07-14 1 page

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PDF 2SA2154MFV Data sheet ( Hoja de datos )