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Número de pieza | 2SA2164 | |
Descripción | Silicon PNP epitaxial planar type For high-frequency amplification | |
Fabricantes | Panasonic Semiconductor | |
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Transistors
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
Features
High transfer ratio fT
SSS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
–30
–20
–5
–30
100
125
–55 to +125
Unit
V
V
V
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+–00..0025
1: Base
2: Emitter
3: Collector
Marking Symbol : E
SSSMini3-F1 Package
Electrical Characteristics Ta = 25°C±3°C
DataSheet4U.com
Parameter
Symbol
Conditions
Min Typ
Base-emitter voltage
VBE VCE = –10 V, IC = –1 mA
– 0.7
Collector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0
Collector-emitter cut-off current (Base open)
ICEO VCE = –20 V, IB = 0
Emitter-base cut-off current (Collector open)
IEBO VEB = –5 V, IC = 0
Forward current transfer ratio
hFE VCB = –10 V, IE = 1 mA
70
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = –1 mA
– 0.1
Transition frequency
fT VCB = –10 V, IE = 1 mA, f = 200 MHz 150 300
Noise figure
NF VCB = –10 V, IE = 1 mA, f = 5 MHz
2.8
Reverse transfer impedance
Zrb VCB = –10 V, IE = 1 mA, f = 2 MHz
22
Common-emitter reverse transfer capacitance Cre VCB = –10 V, IE = 1 mA, f = 10.7 MHz
1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
– 0.1
–100
–10
220
Unit
V
µA
µA
µA
V
MHz
dB
Ω
pF
DataShee
DataSheet4U.com
Publication date : December 2004
DataSheet4 U .com
SJC00330AED
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1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SA2164.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SA2162 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
2SA2164 | Silicon PNP epitaxial planar type For high-frequency amplification | Panasonic Semiconductor |
2SA2166 | SILICON PNP EPITAXIAL TYPE | Isahaya Electronics Corporation |
2SA2167 | SILICON PNP EPITAXIAL TYPE | Isahaya Electronics Corporation |
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