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PDF SF5JZ47 Data sheet ( Hoja de datos )
| Número de pieza | SF5JZ47 | |
| Descripción | TOSHIBA THYRISITOR SILICON PLANAR TYPE | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SF5GZ47,SF5JZ47
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF5GZ47,SF5JZ47
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak off−State Voltage : VDRM = 400, 600V
Repetitive Peak Reverse Voltage : VRRM = 400, 600V
l Average On−State Current
: IT (AV) = 5A
l Isolation Voltage
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Off−State Voltage
and Repetitive Peak
Reverse Voltage
SF5GZ47
SF5JZ47
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive<5ms,
Tj = 0~125°C)
SF5GZ47
SF5JZ47
Average On−State Current
(Half Sine Waveform Tc = 85°C)
R.M.S. On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
VDRM
VRRM
400
600
V
500
VRSM
V
720
IT (AV) 5 A
IT (RMS)
7.8
A
ITSM
I2t
80 (50Hz)
DataS88h(e6e0Ht4zU) .com A
32 A2s
di / dt
100 A / µs
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
VIsol
5
0.5
10
−5
2
−40~125
−40~125
1500
W
W
V
V
A
°C
°C
V
Note 1: di / dt test condition, VDRM = 0.5 × Rated, ITM ≤ 15A, tgw ≥ 10µs,
tgr ≤ 250ns, igp = IGT × 2.0
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13−10H1B
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SF5GZ47,SF5JZ47
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SF5JZ47.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SF5JZ47 | TOSHIBA THYRISITOR SILICON PLANAR TYPE | Toshiba Semiconductor |
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