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PDF STP9NK65ZFP Data sheet ( Hoja de datos )
| Número de pieza | STP9NK65ZFP | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP9NK65Z
STP9NK65ZFP
N-channel 650 V, 1 Ω, 6.4 A, TO-220, TO-220FP
Zener-protected SuperMESH™ Power MOSFET
Features
Order codes
STP9NK65Z
STP9NK65ZFP
VDSS
650 V
650 V
RDS(on)
max.
< 1.2 Ω
< 1.2 Ω
ID
6.4 A
6.4 A
Pw
125 W
30 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Applications
■ Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STP9NK65Z
P9NK65Z
STP9NK65ZFP
P9NK65ZFP
Package
TO-220
TO-220FP
January 2012
Doc ID 8981 Rev 4
Packaging
Tube
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1/16
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16
1 page  
STP9NK65Z, STP9NK65ZFP
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.4 A, VGS = 0
ISD = 6.4 A,
di/dt = 100 A/µs
VDD = 50 V, Tj = 150 °C
(see Figure 4)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
6.4 A
-
25.6 A
- 1.6 V
400
- 2600
13
ns
nC
A
Table 9. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1)
Igs=±1 mA
Gate-source breakdown voltage
(open drain)
30 -
-V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Doc ID 8981 Rev 4
5/16
5 Page 
STP9NK65Z, STP9NK65ZFP
Table 10. TO-220 type A mechanical data
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Min.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ.
1.27
16.40
28.90
Package mechanical data
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Doc ID 8981 Rev 4
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STP9NK65ZFP.PDF ] | |
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