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PDF STP25N06 Data sheet ( Hoja de datos )
| Número de pieza | STP25N06 | |
| Descripción | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
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STP25N06
STP25N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP25N06
STP25N06FI
VDSS
60 V
60 V
R DS( on)
< 0.065 Ω
< 0.065 Ω
ID
25 A
16 A
s TYPICAL RDS(on) = 0.048 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
TO-220
3
2
1
ISOWATT220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
INTERNAL SCHEMATIC DIAGRAM
s DC-DC & DC-AC CONVERTERS
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s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
DataShee
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1996
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Val ue
STP25N06
ST P2 5N 06 F I
60
60
± 20
25 16
17 11
100 100
90 40
0.6 0.27
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
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Transconductance
STP25N06/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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DataShee
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP25N06.PDF ] | |
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| STP25N06FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | ST Microelectronics |
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