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PDF STB5610 Data sheet ( Hoja de datos )
| Número de pieza | STB5610 | |
| Descripción | GPS RF FRONT-END IC | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STB5610
• ONE CHIP SYSTEM TO INTERFACE GPS
ANTENNA TO GPS MICRO CONTROLLER
• ABLE TO SUPPORT ACTIVE AND PASSIVE
ANTENNA
• MINIMUM EXTERNAL COMPONENTS
• COMPATIBLE WITH GPS L1 SPS SIGNAL AND
GALILEO FREQUENCIES
• CMOS OUTPUT LEVELS
• 2.7 V .. 3.6 V SUPPLY VOLTAGE
• EMBEDDED LOW PHASE NOISE PLL
• ACTIVE ANTENNA SENSOR
• SMART CHIP ENABLE FUNCTION FOR POWER
CONSUMPTION OPTIMIZATION
• ESD PROTECTED
GPS RF FRONT-END IC
PRELIMINARY DATA
TQFP48
ORDER CODE
STB5610
BRANDING
STB5610
DESCRIPTION
The STB5610, using ST Microelectronics RDFaBtaipSohlaeret4U.com
technology, implements a Global Positioning System
RF front-end. The chip provides down conversion
from the 1575.42 MHz GPS (L1) signal to 4.092 MHz
Output signal. The integrated PLL with on-chip
reference oscillator uses a low cost 16.368 MHz
crystal. No TCXO is required.
PIN CONNECTION
DataShee
Vcc_XTAL
Vcc_Logic
LF
Vcc_VCO
Gnd
TNK1
TNK2
Gnd
Gnd
IF1+
IF1-
Gnd
48 47 46 45 44 43 42 41 40 39 38 37
1 36 Vcc_Logic2
2 35 Gnd
3 34 DATA
4 33 CLK
5 32 Gnd_Driver
6 31 Vcc_Driver
7 30 Gnd_Loic
8 29 Vcc_Logic
9 28 AS1
10 27 AS2
11 26 As_out
12 25 GC
13 14 15 16 17 18 19 20 21 22 23 24
December, 15 2003
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STB5610
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Vcc Supply voltage
Tj Junction operating temperature
Value
5.9
-40 to 125
Unit
V
oC
et4U.com
THERMAL DATA
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Value
TBD
ELECTRICAL CHARACTERISTICS (Vcc = 3+/-10%, Tcase= 25 oC)
Symbol
Parameter
Test conditions
Min.
SUPPLY
Vcc
Icc
AS1
Supply voltage
Supply current
Vcc Antenna
Supply
2.7
2.7
LNA
Gp
NF
IIP3
VSWRin
Power gain
Noise figure
Input IP3
Voltage Stat. Wave
Ratio
Pin GC at GND
Pin GC at Vcc
Pin GC at GND
Pin GC at Vcc
PDinaGtaCSaht eGeNt4DU.com
Pin GC at Vcc
ZL=50Ω
Typ.
3.3
37
3.3 / 5
19
10
3
10
-20
-5
Unit
oC/W
Max.
Unit
3.6 V
mA
5.5 V
dB
dB
dBm
2.1
DataShee
RF AMPLIFIER AND MIXER CHAIN
IIP3 Input IP3
NF Noise Figure
ZIN Input impedance
ZOUT
Differential output
impedance
fRF Input signal RF
G
Voltage Convertion
Gain
-19
5.5
50
1.4
1.575
30
dBm
dB
Ω
ΚΩ
MHz
dB
FIRST LIMITING AMPLIFIER
G Voltage Gain
ZOUT
Differential output
impedance
60 dB
2.4 ΚΩ
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STB5610
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet STB5610.PDF ] | |
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