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PDF IRFP340 Data sheet ( Hoja de datos )
| Número de pieza | IRFP340 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRFP340
July 1999 File Number 2088.3
11A, 400V, 0.550 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17424.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP340
TO-247
IRFP340
NOTE: When ordering, include the entire part number.
Features
• 11A, 400V
• rDS(ON) = 0.550Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
S
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JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
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4-329
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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IRFP340
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2500
2000
1500
1000
500
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
0
1 10 102 103
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
12
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 25oC
9
10
TJ = 150oC
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TJ = 150oC
1 TJ = 25oC
3
0
0 4 8 12 16 20
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0.1
0
0.3 0.6 0.9 1.2
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.5
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 10A
16
12
8
VDS = 80V
VDS = 200V
VDS = 320V
4
0
0 12 24 36 48 60
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
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