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PDF MRFIC1856 Data sheet ( Hoja de datos )
| Número de pieza | MRFIC1856 | |
| Descripción | Dual Band / Dual Mode pHEMT GaAs IPA | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Advance Information
Dual-Band/Dual-Mode
pHEMT GaAs IPA
The MRFIC1856 is designed for dual–band subscriber equipment
applications at 3.6 V in the cellular (800 MHz) and PCS (1900 MHz) bands.
The device incorporates two pHEMT GaAs amplifier chains in one package,
allowing the most flexibility and highest performance while reducing board
space. Target applications include dual–band/dual–mode handsets for
TDMA/AMPS and PCS TDMA cellular phones.
• Designed to Operate in Frequency Ranges of:
824 to 849 MHz TDMA/AMPS
1850 to 1910 MHz PCS TDMA
• 3.6 V Operation
• 30 dBm Output Power PCS TDMA
• 31 dBm Output Power TDMA Cellular
• 31 dBm Output Power AMPS
MRFIC1856
DUAL–BAND/DUAL–MODE
GaAs INTEGRATED POWER
AMPLIFIER
SEMICONDUCTOR
TECHNICAL DATA
20
1
(Scale 2:1)
PLASTIC PACKAGE
CASE 948M
(TSSOP–20EP, Tape & Reel Only)
PIN CONNECTIONS
Simplified Block Diagram
Vd1A
Vd2A Vg3A
VSS
VG1A
RFinA
Bias
RFinB
VG1B
RFoA/VD3A
RFoB/VD3B
VG3A
VD1A
VSS
RFinA
VG1A
VG1B
RFinB
Gnd
1
2
3
4
5
6
7
8
VD1B 9
VG3B 10
(Top View)
20 VD2A
19 RFoA/VD3A
18 RFoA/VD3A
17 RFoA/VD3A
16 Gnd
15 RFoB/VD3B
14 RFoB/VD3B
13 RFoB/VD3B
12 RFoB/VD3B
11 VD2B
VD1B
VD2B VG3B
This device contains 8 active transistors.
This document contains information on a new product. Specifications and information herein
arMe OsuTbjOecRt tOo cLhAangWe IwRithEoLuEt nSotSiceS. EMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
ORDERING INFORMATION
Device
Operating
Temp Range
Package
MRFIC1856R2 TC = –35 to 85°C TSSOP–20EP
© Motorola, Inc. 2000
Rev 1
1
1 page  
MRFIC1856
Figure 3. Gain versus
Frequency
33.5
33 TA = –35°C
32.5
32
25°C
31.5
85°C
31
30.5
30
820
VDD = 3.6 V
825 830 835 840
f, FREQUENCY (MHz)
TDMA PERFORMANCE
36
Figure 4. Gain versus
Frequency
34
VDD = 4.8 V
32
3.6 V
30
28
26 TA = 25°C
3.0 V
845 850
24
820 825 830 835 840
f, FREQUENCY (MHz)
845
850
Figure 5. Output Power versus
Input Power
35
30 TA = –35°C
25
25°C
20
85°C
15
f = 836 MHz
10 VDD = 3.6 V
5.0
–20 –15 –10 –5.0 0 5.0
Pin, INPUT POWER (dBm)
10
Figure 6. Output Power versus
Input Power
40
35
VDD = 4.8 V
30
25 3.6 V
20
3.0 V
15
10
f = 836 MHz
TA = 25°C
5.0
–20 –15 –10 –5.0 0 5.0
Pin, INPUT POWER (dBm)
10
Figure 7. Adjacent Channel Power
versus Output Power
–15
–20
f = 836 MHz
VDD = 3.6 V
–25
–30
TA = –35°C, 25°C, & 85°C
–35
–40
5.0 10 15 20 25 30 35 40
Pout, OUTPUT POWER (dBm)
Figure 8. Adjacent Channel Power
versus Output Power
–15
–20 f = 836 MHz
TA = 25°C
–25
–30
VDD = 3.0 V
3.6 V
4.8 V
–35
–40
5.0 10 15 20 25 30 35 40
Pout, OUTPUT POWER (dBm)
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRFIC1856.PDF ] | |
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