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PDF MRFIC1817 Data sheet ( Hoja de datos )

Número de pieza MRFIC1817
Descripción 1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
Fabricantes Motorola Semiconductors 
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( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFIC1817/D
The MRFIC Line
1800 MHz GaAs Integrated
Power Amplifier
Designed specifically for application in Pan European digital 1.0 watt
DCS1800/PCS1900 handheld radios, the MRFIC1817 is specified for 32 dBm
output power with power gain over 27 dB from a 3.6 volt supply. To achieve this
superior performance, Motorola’s planar GaAs MESFET process is employed.
The device is packaged in the PFP–16 Power Flat Package which gives
excellent thermal and electrical performance through a solderable backside
contact while allowing the convenience and cost benefits of reflow soldering.
Minimum Output Power Capabilities
32 dBm @ 3.6 Volts
30 dBm @ 3.0 Volts
Typical Volt Characteristics
RF Input Power = 5.0 dBm
RF Output Power = 33.5 dBm
Typical PAE = 42%
Low Current required from Negative Supply – 2 mA max
Guaranteed Stability and Ruggedness
Order MRFIC1817R2 for Tape and Reel.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Device Marking = M1817
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, ZO = 50 , unless otherwise noted)
Rating
Symbol
DC Positive Supply Voltage
DC Negative Supply Voltage
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
VD1, 2, 3
VSS
Pin
Pout
TC
Tstg
RθJC
MRFIC1817
1700–1900 MHz MMIC
DCS1800/PCS1900
INTEGRATED POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 978–02
(PFP–16)
Value
6
–5
10
35
– 35 to +85
–55 to +150
10
Unit
Vdc
Vdc
dBm
dBm
°C
°C
°C/W
GND 9
VD2 10
VD2 11
VD1 12
N/C 13
GND 14
RF IN 15
N/C 16
8 VG
7 VD3
6 RF OUT
5 RF OUT
4 RF OUT
3 RF OUT
2 N/C
1 GND
Pin Connections and Functional Block Diagram
www.DataSheet4U.com
www©.MDOaMtoaTtSoOrhoRelaeO,tI4LnUcA..1cR9o9Fm7 DEVICE DATA
MRFIC1817
1

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MRFIC1817 pdf
Typical Characteristics
60
50
TA = –35°C
40
30
25°C
20
85°C
10
f = 1.75 GHz
Pin = 5 dBm
VSS = –4 V
0
012345
VD1, VD2, VD3, DRAIN VOLTAGE (VOLTS)
Figure 9. Power Added Efficiency versus
Drain Voltage
35
33
31 TA = –35°C
29
27
25 25°C
23
21
19
17
15
–20
85°C
f = 1.75 GHz
VD1, VD2, VD3 = 3.6 V
VSS = –4 V
–15 –10 –5 0 5 10
Pin, INPUT POWER (dBm)
Figure 10. Output Power versus Input Power
50
45
40
35 TA = –35°C
30
25 25°C
20
15
10
5
0
–20
–15
85°C f = 1.75 GHz
VD1, VD2, VD3 = 3.6 V
VSS = –4 V
–10 –5 0 5 10
Pin, INPUT POWER (dBm)
Figure 11. Power Added Efficiency versus
Input Power
–20
–25
–30
–35
–40
–45
–50
–55
–60
0
f = 1.75 GHz
Pin = 5 dBm
VSS = –4 V
TA = –35°C
85°C
25°C
1234
VD1, VD2, VD3, DRAIN VOLTAGE (VOLTS)
Figure 12. Second Harmonic versus
Drain Voltage
5
0
–5
–10
–15
–20
–25
–30
–35
–40
0
f = 1.75 GHz
Pin = 5 dBm
VSS = –4 V
TA = –35°C
25°C 85°C
1234
VD1, VD2, VD3, DRAIN VOLTAGE (VOLTS)
Figure 13. Third Harmonic versus
Drain Voltage
5
35
34.5
34
33.5
33
32.5
32
31.5
31
1.85
TA = –35°C
25°C
85°C
Pin = 5 dBm
VD1, VD2, VD3 = 3.6 V
VSS = –4 V
1.86 1.87 1.88 1.89
f, FREQUENCY (GHz)
1.9
Figure 14. Output Power versus
Frequency – PCS Band
1.91
MOTOROLA RF DEVICE DATA
MRFIC1817
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