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PDF LM78S40 Data sheet ( Hoja de datos )

Número de pieza LM78S40
Descripción Universal Switching Regulator Subsystem
Fabricantes National Semiconductor 
Logotipo National Semiconductor Logotipo



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No Preview Available ! LM78S40 Hoja de datos, Descripción, Manual

April 1998
LM78S40
Universal Switching Regulator Subsystem
General Description
The LM78S40 is a monolithic regulator subsystem consisting
of all the active building blocks necessary for switching regu-
lator systems. The device consists of a temperature com-
pensated voltage reference, a duty-cycle controllable oscilla-
tor with an active current limit circuit, an error amplifier, high
current, high voltage output switch, a power diode and an
uncommitted operational amplifier. The device can drive ex-
ternal NPN or PNP transistors when currents in excess of
1.5A or voltages in excess of 40V are required. The device
can be used for step-down, step-up or inverting switching
regulators as well as for series pass regulators. It features
wide supply voltage range, low standby power dissipation,
high efficiency and low drift. It is useful for any stand-alone,
low part count switching system and works extremely well in
battery operated systems.
Features
n Step-up, step-down or inverting switching regulators
n Output adjustable from 1.25V to 40V
n Peak currents to 1.5A without external transistors
n Operation from 2.5V to 40V input
n Low standby current drain
n 80 dB line and load regulation
n High gain, high current, independent op amp
n Pulse width modulation with no double pulsing
Block and Connection Diagrams
16-Lead DIP
DS010057-2
Top View
DS010057-1
© 1998 National Semiconductor Corporation DS010057
www.national.com

1 page




LM78S40 pdf
Typical Performance Characteristics
CT vs OFF Time
Reference Voltage vs
Junction Temperature
Discharge Current vs
Input Voltage
DS010057-6
Current Limit Sense
Voltage vs Input Voltage
DS010057-7
DS010057-8
Design Formulas
Characteristic
Step-Down
(ton + toff) Max
CT
Ipk
LMin
4 x 10−5 ton
2 IO Max
RSC
CO
0.33/Ipk
Note 6: VSAT = Saturation voltage of the switching element.
VD = Forward voltage of the flyback diode.
Step-Up
4 x 10−5 ton
0.33/Ipk
5
DS010057-9
Inverting
4 x 10−5 ton
0.33/Ipk
Units
µs
µF
A
µH
µF
www.national.com

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