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PDF IRSF3011 Data sheet ( Hoja de datos )
| Número de pieza | IRSF3011 | |
| Descripción | FULLY PROTECTED POWER MOSFET SWITCH | |
| Fabricantes | International Rectifier | |
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Data Sheet No.PD 60133-H
IRSF3011 (NOTE: For new designs, we
recommend IR’s new products IPS021 and IPS021L)
FULLY PROTECTED POWER MOSFET SWITCH
Features
· Extremely rugged for harsh operating environments
· Over-temperature protection
· Over-current protection
· Active drain-to-source clamp
· ESD protection
· Lead compatible with standard Power MOSFET
· Low operating input current
· Monolithic construction
Description
The IRSF3011 is a three-terminal monolithic Smart Power
MOSFET with built-in short circuit, over-temperature, ESD
and over-voltage protections.
The on-chip protection circuit latches off the Power MOSFET
in case the drain current exceeds 7A (typical) or the junction
temperature exceeds 165°C (typical) and keeps it off until the
input is driven low. The drain to source voltage is actively
clamped at 55V (typical), prior to the avalanche of Power
MOSFET, thus improving its performance during turn-off with
inductive loads.
The input current requirements are very low (300µA) which
makes the IRSF3011 compatible with most existing designs
based on standard Power MOSFETs.
Block Diagram
Product Summary
Vds(clamp)
50V
Rds(on)
Ids(sd)
Tj(sd)
200mW
7A
165oC
EAS 200mJ
Applications
· Solenoid Driver
· DC Motor Driver
Available Packages
3 Lead
TO220AB
DRAIN
3 Lead
SOT223
INPUT
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SOURCE
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1
1 page  
Case Outline 3 Lead - SOT-223
IRSF3011
www.irf.com
IRGB X01-3032 00
5
5 Page 
IRSF3011
Switching Characteristics
In the IRSF3011, the control logic and the protection
circuits are powered from the input pin. When positive
voltage appears at the input pin, the R-S flip-flop turns
Q2 on and connects the gate of the main device to the
input.
The turn-on speed is limited by the channel resistance
of Q2 and the gate charge requirements of Q1. The
typical switching waveforms at 5V input voltage are
shown in Figure A2. Using higher input voltage will
improve the turn-on time but it will not affect the turn-
off switching speed.
Input voltage 5V/div.
Drain voltage 5V/div.
Drain Current: 1A/div.
Figure A1. Block Diagram
Input voltage 5V/div.
Drain voltage 5V/div.
Drain Current: 1A/div.
Time: 1msV/div.
Figure A2. Waveforms switching clamped inductive
load using 5V input voltage
www.irf.com
Time: 1msV/div.
Figure A3. Switching waveforms with 7V Input
voltage
The typical waveforms at 7V input voltage are shown
in Figure A3. In typical switching applications (below
60kHz) the difference in switching losses between
the IRSF3011 / IRSF3012 and the same size standard
MOSFET is negligible.
Over-Current Protection
When the drain current exceeds the preset limit, the
protection circuit resets the internal flip-flop and turns
Q1 off. Normal operation can be restored by holding
the input voltage below the specified threshold level
(approx. 1.3V) for the specified minimum treset time.
The typical waveforms at over-current shut-down are
shown in Figure A4. After turn-on, the current in the
inductor at the drain starts ramping up. At about 7A,
the over-current protection shuts down the device.
Over-Temperature Protection
Figure A5 illustrates the operation of the over-tem-
perature protection. The IRSF3011 / IRSF3012
switches a 2W resistive load to a 10V power supply.
When the thermal balance is established, the junc-
tion temperature is limited on a pulse-by-pulse basis.
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRSF3011.PDF ] | |
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