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Número de pieza | SKIIP21NAB12 | |
Descripción | IGBT POWER MODULE | |
Fabricantes | Semikron | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SKIIP21NAB12 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! SKiiP 21 NAB 12 - SKiiP 21 NAB 12 I
MiniSKiiP 2
SEMIKRON integrated
Absolute Maximum Ratings
intelligent Power
Symbol Conditions 1)
Values
Units SKiiP 21 NAB 12
Inverter (Chopper see SKiiP 22 NAB 12)
VCES
VGES
IC
ICM
IF = –IC
IFM = –ICM
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
Bridge Rectifier
1200
± 20
16 / 11
32 / 22
24 / 17
48 / 34
SKiiP 21 NAB 12 I 3)
V
V
A
A
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
A
A
Case M2
VRRM
1500
V
ID Theatsink = 80 °C
IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C
I2t tp = 10 ms; sin. 180 °, Tj = 25 °C
25
700
2400
mTj
oTstg
Visol
AC, 1 min.
– 40 . . . + 150
– 40 . . . + 125
2500
A
A
A2s
°C
°C
V
.cCharacteristics
USymbol Conditions 1)
min. typ. max. Units
IGBT - Inverter
t4VCEsat
td(on)
etr
td(off)
etf
Eon + Eoff
hCies
Rthjh
IC = 10 A Tj = 25 (125) °C
VCC = 600 V; VGE = ± 15 V
IC = 10 A; Tj = 125 °C
Rgon = Rgoff = 150 Ω
inductive load
VCE = 25 V; VGE = 0 V, 1 MHz
per IGBT
– 2,7(3,3) 3,2(3,9) V
– 55 110 ns
– 50 100 ns
– 380 570 ns
– 80 120 ns
– 2,7 – mJ
– 0,53 – nF
– – 1,8 K/W
SIGBT - Chopper *
taVCEsat
td(on)
tr
atd(off)
tf
.DEon + Eoff
Cies
Rthjh
IC = 15 A Tj = 25 (125) °C
VCC = 600 V; VGE = ± 15 V
IC = 15 A; Tj = 125 °C
Rgon = Rgoff = 82 Ω
inductive load
VCE = 25 V; VGE = 0 V, 1 MHz
per IGBT
– 2,5(3,1) 3,0(3,7) V
– 55 110 ns
– 45 90 ns
– 400 600 ns
– 70 100 ns
– 4,0 – mJ
– 1,0 – nF
– – 1,4 K/W
wDiode 2) - Inverter & Chopper
VF = VEC
wVTO
rT
wIRRM
Qrr
mEoff
oRthjh
IF = 15 A Tj = 25 (125) °C
Tj = 125 °C
Tj = 125 °C
IF = 15 A, VR = – 600 V
diF/dt = – 400 A/µs
VGE = 0 V, Tj = 125 °C
per diode
– 2,0(1,8) 2,5(2,3) V
– 1,0 1,2 V
– 53 73 mΩ
– 16 – A
– 2,7 – µC
– 0,6 – mJ
– – 1,7 K/W
.cDiode - Rectifier
t4UVF
Rthjh
IF = 35 A, Tj = 25 °C
per diode
– 1,2 – V
– – 1,6 K/W
eeTemperature Sensor
hRTS T = 25 / 100 °C
1000 / 1670
Ω
SMechanical Data
taM1
.DaCase
case to heatsink, SI Units
mechanical outline see page
B 16 – 7
2 – 2,5 Nm
M2
w* For diagrams of the Chopper please refer to SKiiP 22 NAB 12
ww© by SEMIKRON
0698
UL recognized file no. E63532
• specification of shunts and
temperature sensor see part A
• common characteristics see
page B 16 – 4
1) Theatsink = 25 °C, unless
otherwise specified
2) CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
3) With integrated AC shunts
Rcs(ac)
1 % 22 mΩ
B 16 – 51
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SKIIP21NAB12.PDF ] |
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