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Número de pieza | H5N5006FM | |
Descripción | Silicon N-Channel MOSFET | |
Fabricantes | Hitachi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de H5N5006FM (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! H5N5006FM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1112 (Z)
mFeatures
o• Low on-resistance: RDS(on) = 2.5 typ.
.c• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
• High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)
U• Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)
t4• Avalanche ratings
eOutline
eTO-220FM
1st. Edition
Mar. 2001
taShD
.DaG
www www.DataSheet4U.comS
123
1. Gate
2. Drain
3. Source
1 page Drain to Source Saturation Voltage vs.
Gate to Source Voltage
20
Pulse Test
16
12
ID=3A
8
2A
4
1A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
H5N5006FM
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
VGS = 10 V, 15 V
2
1
0.5
0.2
0.1
0.1 0.2
0.5 1
2
5
Drain Current ID (A)
10
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
8 V GS = 10 V
6 ID=3A
4
2A
2 1A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25°C
2
1 25°C
75°C
0.5
V DS = 10 V
0.2 Pulse Test
0.1
0.1 0.2
0.5 1
2
5 10
Drain Current ID (A)
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet H5N5006FM.PDF ] |
Número de pieza | Descripción | Fabricantes |
H5N5006FM | Silicon N-Channel MOSFET | Hitachi |
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