PDF AS4C256K16FO Data sheet ( Hoja de datos )

Número de pieza	AS4C256K16FO
Descripción	5V 256K x 16 CMOS DRAM
Fabricantes	Alliance Semiconductor
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No Preview Available ! AS4C256K16FO ® 5V 256K X 16 CMOS DRAM (Fast Page Mode) Features • Organization: 262,144 words × 16 bits • Refresh • High speed - 512 refresh cycles, 8 ms refresh interval - 25/30/35/50 ns RAS access time - RAS-only or CAS-before-RAS refresh or self-refresh - 12/16/18/25 ns column address access time - Self-refresh option is available for new generation - 7/10/10/10 ns CAS access time device only. Contact Alliance for more information. • Low power consumption • Read-modify-write - Active: 770 mW max (ASAS4C256K16FO-50) - Standby: 5.5 mW max, CMOS I/O • Fast page mode m• AS4C256K16FO-50 timings are also valid for oAS4C256K16FO-60. • TTL-compatible, three-state I/O • JEDEC standard packages - 400 mil, 40-pin SOJ - 400 mil, 40/44-pin TSOP II • Single 5V power supply/built-in Vbb generator • Latch-up current > 200 mA .cPin arrangement t4UI/VOC0C I/O1 I/O2 I/O3 eI/VOC4C eI/O5 I/O6 I/O7 hNC NC WE SRAS NC taA0 A1 A2 A3 aVCC SOJ 1 40 2 39 3 38 4 37 5 36 6 35 7 34 8 33 9 32 10 31 11 30 12 29 13 28 14 27 15 26 16 25 17 24 18 23 19 22 20 21 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 VCC I/O0 I/O1 I/O2 I/O3 I/VOC4C I/O10 I/O9 I/O8 I/O5 I/O6 I/O7 NC LCAS UCAS NC OE NC A8 WE A7 RAS A6 NC A5 A0 A4 A1 GND A2 A3 VCC TSOP II 1 44 2 43 3 42 4 41 5 40 6 39 7 38 8 37 9 36 10 35 13 32 14 31 15 30 16 29 17 28 18 27 19 26 20 25 21 24 22 23 VSS I/O15 I/O14 I/O13 I/O12 VI/SOS 11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A8 A7 A6 A5 A4 VSS Pin designation Pin(s) A0 to A8 RAS I/O0 to I/O15 OE UCAS LCAS WE VCC GND Description Address inputs Row address strobe Input/output Output enable Column address strobe, upper byte Column address strobe, lower byte Read/write control Power (+5V ± 10%) Ground .DSelection guide wSymbol –25 –30 –35 –50 Unit Maximum RAS access time tRAC 25 30 35 50 ns wMaximum column address maccess time tCAA 12 16 18 25 ns w oMaximum CAS access time .cMaximum output enable (OE) Uaccess time tCAC tOEA 7 7 10 10 10 10 10 ns 10 ns et4Minimum read or write cycle etime tRC 40 65 70 85 ns hMinimum EDO page mode Scycle time tPC 12 12 14 25 ns ataMaximum operating current ICC1 200 180 160 140 mA .DMaximum CMOS standby current ICC2 2.0 2.0 2.0 2.0 mA www4/11/01; V.0.9.1 Alliance Semiconductor P. 1 of 25 Copyright © Alliance Semiconductor. All rights reserved. 1 page AS4C256K16FO ® Write cycle Standard Symbol Parameter tASC tCAH tAWR tWCS tWCH tWCR tWP tRWL tCWL tDS tDH tDHR Column address setup time Column address hold time Column address hold time to RAS Write command setup time Write command hold time Write command hold time to RAS Write command pulse width Write command to RAS lead time Write command to CAS lead time Data-in setup time Data-in hold time Data-in hold time to RAS (VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C) –25 –30 –35 –50 Min Max Min Max Min Max Min Max Unit Notes 0–0–0–0– ns 5–5–5–9– ns 19 – 26 – 28 – 30 – ns 0 – 0 – 0 – 0 – ns 11 5 – 5 – 5 – 9 – ns 11 19 – 26 – 28 – 30 – ns 5–5–5–9– ns 7 – 10 – 11 – 12 – ns 5 – 10 – 11 – 12 – ns 0 – 0 – 0 – 0 – ns 12 5 – 5 – 5 – 9 – ns 12 19 – 26 – 28 – 30 – ns Read-modify-write cycle Standard Symbol Parameter tRWC tRWD tCWD tAWD tRSH(W) tCAS(W) Read-write cycle time RAS to WE delay time CAS to WE delay time Column address to WE delay time CAS to RAS hold time (write) CAS pulse width (write) (VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C) –25 –30 –35 –50 Min Max Min Max Min Max Min Max Unit Notes 100 – 100 – 105 – 120 – ns 34 – 50 – 54 – 60 – ns 11 17 – 26 – 28 – 30 – ns 11 21 – 32 – 35 – 40 – ns 11 7 – 10 – 10 – 12 – ns 15 – 15 – 15 – 15 – ns Fast page mode cycle Standard Symbol Parameter tPC Read or write cycle time tCAP Access time from CAS precharge tCP CAS precharge time tPCM Fast page mode RMW cycle tCRW Page mode CAS pulse width (RMW) tRASP RAS pulse width (VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C) –25 –30 –35 –50 Min Max Min Max Min Max Min Max Unit Notes 8 – 12 – 14 – 25 – ns 14 – 14 – 19 – 21 – 23 ns 13 3 – 3 – 4 – 5 – ns 56 – 56 – 58 – 60 – ns 44 – 44 – 46 – 50 – ns 25 75K 30 75K 35 75K 50 75K ns 4/11/01; V.0.9.1 Alliance Semiconductor P. 5 of 25 5 Page AS4C256K16FO ® Lower byte early write waveform RAS Address UCAS LCAS WE OE Upper I/O Lower I/O tRAS tRC tRAD tAWR tRAL tASR tRAH Row Address Column Address tCRP tASC tRCD tCSH tCRP tCAH tRSH tWCR tWCS tRWL tCWL tWP tCAS tWCH tDHR tDS Data In tDH tRP tRPC tCRP Write waveform RAS UCAS, LCAS Address tASR WE OE I/O tCRP Row Address tRAS tRC tRCD tCSH tRSH tCAS tRAD tRAH tAWR tRAL tASC tCAH Col Address tWCR tRWL tCWL tWP tOEH tDHR tOED tDStDH Data In tRP 4/11/01; V.0.9.1 Alliance Semiconductor P. 11 of 25 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
AS4C256K16FO	5V 256K x 16 CMOS DRAM	Alliance Semiconductor

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