|
|
PDF MBN1200D33A Data sheet ( Hoja de datos )
| Número de pieza | MBN1200D33A | |
| Descripción | Silicon N-Channel IGBT | |
| Fabricantes | Hitachi | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MBN1200D33A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
IGBT MODULE
MBN1200D33A
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
Unit in mm
* High thermal fatigue durability.
(delta Tc=70°C,N>20,000cycles)
* low noise due to built-in free-wheeling
6-M8
diode - ultra soft fast recovery diode(USFD).
3-M4
*High speed,low loss IGBT module.
*Low driving power due to low input
capacitance MOS gate.
*High reliability,high durability module.
m* Isolated head sink (terminal to base).
.coABSOLUTE MAXIMUM RATINGS (Tc=25°C )
8-φ7
Weight: 1,200 (g)
CC C C
G
E
EEE
TERMINALS
UItem Symbol
t4Collector Emitter Voltage
Gate Emitter Voltage
eCollector Current
eForward Current
hCollector Power Dissipation
DC
1ms
DC
1ms
VCES
VGES
IC
ICp
IF
IFM
Pc
SJunction Temperature
Storage Temperature
taIsolation Voltage
Screw Torque
Terminals(M4/M8)
aMounting(M6)
Tj
Tstg
VISO
-
-
Notes: (1)Recommended Value 1.8±0.2/9±1N.m
Unit MBN1200D33A
V 3,300
V ±20
A 1,200
2,400
A
1,200
2,400
W 12,000
°C -40 ~ +125
°C -40 ~ +125
VRMS
N.m
5,400(AC 1 minute)
2/10
6
(2)Recommended Value 5.5±0.5N.m
(1)
(2)
.DCHARACTERISTICS (Tc=25°C )
Item
Symbol Unit Min. Typ. Max.
Test Conditions
wCollector Emitter Cut-Off Current
I CES
mA
-
- 12.0 VCE=3,300V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
- ±500 VGE=±20V,VCE=0V
wCollector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
wInput Capacitance
Rise Time
mSwitching Times
Turn On Time
oFall Time
VCE(sat)
VGE(TO)
Cies
tr
ton
tf
V
V
nF
ms
- 4.1 5.0 IC=1,200A,VGE=15V
4.0 5.5 7.0 VCE=10V, IC =1,200mA
- 150 - VCE=10V,VGE=0V,f=100KHz
- 1.6 2.6 VCC=1,650V,Ic=1,200A
- 2.3 3.2 L=100nH
- 2.4 3.2 RG=3.3W (3)
.cTurn Off Time
toff
- 3.9 5.6 VGE=±15V Tc=125°C
UPeak Forward Voltage Drop
VFM V - 2.8 3.7 -Ic=1,200A,VGE=0V
et4Reverse Recovery Time
trr ms - 0.8 1.4 Vcc=1,650V,-Ic=1,200A,L=100nH,
Tc=125°C (4)
eThermal Impedance IGBT
Rth(j-c) °C/W -
- 0.008
Junction to case
hFWD
Rth(j-c)
- - 0.016
SNotes:(3) RG value is the test condition’s value for decision of the switching times, not recommended value.
taDetermine the suitable RG value after the measurement of switching waveforms
a(overshoot voltage,etc.)with appliance mounted.
.D(4) Counter arm IGBT VGE=-15V
www PDE-N1200D33A-0
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBN1200D33A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBN1200D33A | Silicon N-Channel IGBT | Hitachi |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |