|
|
PDF MBN1200D25B Data sheet ( Hoja de datos )
| Número de pieza | MBN1200D25B | |
| Descripción | Silicon N-Channel IGBT | |
| Fabricantes | Hitachi | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MBN1200D25B (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
IGBT MODULE
MBN1200D25B
Silicon N-channel IGBT
OUTLINE DRAWING
Unit in mm
FEATURES
* High thermal fatigue durability.
(delta Tc=70°C,N>20,000cycles)
* low noise due to built-in free-wheeling
6-M8
3-M4
diode - ultra soft fast recovery diode(USFD).
*High speed,low loss IGBT module.
8-φ7
*Low driving power due to low input
capacitance MOS gate.
m*High reliability,high durability module.
.co* Isolated head sink (terminal to base).
Weight: 1,200 (g)
CC C C
G
E
EEE
TERMINALS
UABSOLUTE MAXIMUM RATINGS (Tc=25°C )
t4Item Symbol
Collector Emitter Voltage
Gate Emitter Voltage
eCollector Current
eForward Current
hCollector Power Dissipation
DC
1ms
DC
1ms
VCES
VGES
IC
ICp
IF
IFM
Pc
SJunction Temperature
Storage Temperature
taIsolation Voltage
Screw Torque
Terminals(M4/M8)
aMounting(M6)
Tj
Tstg
VISO
-
-
Notes: (1)Recommended Value 1.8±0.2/9±1N.m
Unit MBN1200D25B
V 2,500
V ±20
A 1,200
2,400
A
1,200
2,400
W 12,000
°C -40 ~ +125
°C -40 ~ +125
VRMS
N.m
5,000(AC 1 minute)
2/10
6
(2)Recommended Value 5.5±0.5N.m
(1)
(2)
.DCHARACTERISTICS (Tc=25°C )
Item
wCollector Emitter Cut-Off Current
Gate Emitter Leakage Current
wCollector Emitter Saturation Voltage
wGate Emitter Threshold Voltage
Symbol
I CES
IGES
VCE(sat)
VGE(TO)
Unit
mA
nA
V
V
Min.
-
-
-
4.0
Typ.
-
-
2.9
5.5
Max.
Test Conditions
12.0 VCE=2,500V,VGE=0V
±500 VGE=±20V,VCE=0V
3.7 IC=1,200A,VGE=15V
7.0 VCE=10V, IC =1,200mA
Input Capacitance
.comSwitching Times
Rise Time
Turn On Time
Fall Time
Cies nF - 170 - VCE=10V,VGE=0V,f=100KHz
tr - 1.7 2.7 VCC=1,250V,Ic=1,200A
ton ms - 2.7 4.2 L=100nH
tf - 2.4 3.2 RG=3.3W (3)
Turn Off Time
toff
- 4.4 6.4 VGE=±15V Tc=125°C
UPeak Forward Voltage Drop
VFM V - 2.0 2.9 -Ic=1,200A,VGE=0V
et4Reverse Recovery Time
trr ms - 0.8 1.4 Vcc=1,250V,-Ic=1,200A,L=100nH,
Tc=125°C (4)
eThermal Impedance IGBT
Rth(j-c) °C/W -
- 0.008
Junction to case
hFWD
Rth(j-c)
- - 0.016
taSNotes:(3) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
a(overshoot voltage,etc.)with appliance mounted.
.D(4) Counter arm IGBT VGE=-15V
www PDE-N1200D25B-0
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBN1200D25B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBN1200D25B | Silicon N-Channel IGBT | Hitachi |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |