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PDF SKHI17 Data sheet ( Hoja de datos )
| Número de pieza | SKHI17 | |
| Descripción | (SKHI10 / SKHI17) High Power IGBT Driver | |
| Fabricantes | Semikron International | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SKHI17 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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1 page  
5. Pulse transformer
It transmits the turn-on and turn-off signals to the IGBT. In
the reverse direction the ERROR signal from the VCE
monitoring is transmitted via the same transformer. The
isolation is 4 kV.
6. DC/DC converter
In the primary side of the converter, a half-bridge inverter
transfers the necessary energy from Vs to the secondary
of a ferrite transformer. In the secondary side, a full bridge
and filters convert the high frequency signal coming from
the primary to DC levels (+15V/- 8V) that are stabilised by
a voltage regulator circuit.
7. Output buffer
The output buffer is supplied by the +15V/- 8V from the
DC/DC converter. If the operation proceeds normally (no
fault), the on- and off-signal is transmitted to the gate of an
IGBT through Rgon and Rgoff. The output stage has a
MOSFET pair that is able to source/sink up to 8A peak
current to/from the gate improving the turn-on/off time of the
IGBT. Additionally, we can select IRgoff (see Fig. 2) either
to discharge the gate capacitance with a voltage source
(standard) or with a current source, specially design for the
1700V IGBT series (it speeds up the turn-off time of the
IGBT). The present factory setting is voltage source (IRgoff
= 0Ω). Using the current source IRgoff, Rgoff must be 0 Ω.
Volt
18
IGBT
turn-on
VCE
VCEref = f(RCE,CCE)
RCE=100KΩ
CCE=1nF
14 RCE=18KΩ
CCE=330pF
3
10 tmin1
tmin2
6
RCE=10KΩ
CCE=10pF
2 VCEstat2
1
VCEstat1
VCEsat
2
1µ 3µ 5µ 7µ 9µ sec
Fig.6 VCEref waveform with parameters RCE, CCE
8. Soft turn-off
In case of short-circuit, a further circuit (SOFT TURN-OFF)
increases the resistance in series with Rgoff and turns-off
the IGBT at a lower speed. This produces a smaller voltage
spike (due LSTRAY x di/dt) above the DC link by reducing
the di/dt value. Because in short-circuit conditions the Ho-
mogeneous IGBT’s peak current increases up to 8 times
the nominal current (up to 10 times with Epitaxial IGBT
structures), and some stray inductance is ever present in
power circuits, it must fall to zero in a longer time than at
normal operation. This “soft turn-off time“ can be reduced
by connecting a parallel resistor Rgoff-SC (see Fig. 2) with
those already on the printed circuit board.
9. VCE monitoring
This circuit is responsible for short-circuit sensing. Due to
the direct measurement of VCEstat on the IGBT’s collector,
it blocks the output buffer (through the soft turn-off circuit)
in case of short-circuit and sends a signal to the ERROR
memory on the primary side. The recognition of which VCE
level must be considered as a short circuit event, is adjusted
by RCE and CCE (see Fig. 2), and it depends of the IGBT
used. Typical values RCE =18kΩ and CCE =330 pF for SKHI
10 are delivered from factory (Fig. 6, curve 2). Using SKHI
10/17 the driver will be delivered with RCE = 36 kΩ and CCE
= 470 pF from factory.
The VCEref is not static but a dynamic reference which has
an exponential shape starting at about 15V and decreases
to VCEstat (5V < VCEstat < 10V determinated by RCE), with a
time constant τ (0,5 µs < τ < 1ms controlled by CCE). The
VCEstat must be adjusted to remain above VCEsat in normal
operation (the IGBT is already in full saturation).
To avoid a false failure indication when the IGBT just starts
to conduct (VCEsat value is still too high) some decay time
must be provided for the VCEref. As the VCE signal is
internally limited at 10V, the decay time of VCEref must reach
this level after VCE or a failure indication will occur (see
Fig.6, curve 1). A tmin is defined as function of VCEstat and τ
to find out the best choice for RCE and VCE (see Fig.6, curve
2). The time the IGBT come to the 10V (represented by a
,,t“ in Fig. 6) depends on the IGBT itself and Rgon used.
The RCE and CCE values can be found from Fig. 7 by taking
the VCEstat and tmin as input values with following remarks:
• RCE > 10KΩ
• CCE < 2,7nF
Attention!: If this function is not used, for example during
the experimental phase, the VCE MONITORING must be
connected with the EMITTER output to avoid possible fault
indication and consequent gate signal blocking.
10. Rgon, Rgoff
These two resistors are responsible for the switching speed
of each IGBT. As an IGBT has input capacitance (varying
during the switching time) which must be charged and
discharged, both resistors will dictate what time must be
taken to do this. The final value of resistance is difficult to
predict, because it depends on many parameters, as fol-
lows:
• DC-link voltage
• stray inductance of the circuit
• switching frequency
• type of IGBT
C. Operating Procedure
1. One IGBT connection
To realize the correct switching and short-circuit monitoring
of one IGBT some additional external components must be
used (Fig.8).
The driver is delivered with four Rg resistors (43Ω). This
value can be reduced to use the driver with bigger modules
or higher frequencies/lower voltages, by putting additional
resistors in parallel to the existing ones.
© by SEMIKRON
020826
B 14 – 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SKHI17.PDF ] | |
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