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PDF SPP11N60C3 Data sheet ( Hoja de datos )
| Número de pieza | SPP11N60C3 | |
| Descripción | Cool MOS Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
• Periodic avalanche rated
PG-TO220FP PG-TO262
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO220-3-31
23
1
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V
0.38 Ω
11 A
PG-TO220
Type
Package
SPP11N60C3
PG-TO220
SPI11N60C3
PG-TO262
SPA11N60C3 PG-TO220FP
SPA11N60C3E8185 PG-TO220
Ordering Code
Q67040-S4395
Q67042-S4403
Q67040-S4408
Marking
11N60C3
11N60C3
11N60C3
11N60C3
Maximum Ratings
Parameter
Symbol
Value
SPP_I
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 7)
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
11 111)
7 71)
33 33
340 340
0.6 0.6
11 11
±20 ±20
±30 ±30
125 33
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3 . 2
Page 1
2009-11-27
1 page  
1 Power dissipation
Ptot = f (TC)
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
2 Power dissipation FullPAK
Ptot = f (TC)
SPP11N60C3
140
W
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
35
W
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
10 -1
tp = 0.1 ms
tp = 1 ms
DC
10
-2
10
0
10 1
Rev. 3 .2
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
tp = 10 ms
DC
10 2 V 10 3
VDS
10
-2
10
0
Page 5
10 1
10 2 V 10 3
VDS
2009-11-27
5 Page 
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
25 Typ. Coss stored energy
Eoss=f(VDS)
7.5
µJ
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 100 200 300 400 V 600
VDS
Definition of diodes switching characteristics
Rev . 3 .2
Page 11
2009-11-27
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet SPP11N60C3.PDF ] | |
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