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Número de pieza | SPP11N60S5 | |
Descripción | Cool MOS Power Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPP11N60S5 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! heet4U.comCool MOS™ Power Transistor
taSFeature
a• New revolutionary high voltage technology
.D• Ultra low gate charge
ww• Periodic avalanche rated
w• Extreme dv/dt rated
• Ultra low effective capacitances
m• Improved transconductance
SPP11N60S5, SPB11N60S5
SPI11N60S5
P-TO262
VDS
RDS(on)
ID
600
0.38
11
V
Ω
A
P-TO263-3-2
P-TO220-3-1
2
P-TO220-3-1
123
t4U.coType
SPP11N60S5
eSPB11N60S5
eSPI11N60S5
Package
P-TO220-3-1
P-TO263-3-2
P-TO262
Ordering Code
Q67040-S4198
Q67040-S4199
Q67040-S4338
Marking
11N60S5
11N60S5
11N60S5
hMaximum Ratings
SParameter
Symbol
taContinuous drain current
aTC = 25 °C
.DTC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
wAvalanche energy, single pulse
EAS
ID = 5.5 A, VDD = 50 V
wwAvalanche energy, repetitive tAR limited by Tjmax1) EAR
Value
11
7
22
340
0.6
Unit
A
mJ
ID = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Rev. 2.1
Page 1
IAR
VGS
VGS
Ptot
Tj , Tstg
om11
.c±20
t4U±30
ee125
Sh-55... +150
A
V
W
°C
www.Data 2004-03-30
1 page 1 Power dissipation
Ptot = f (TC)
SPP11N60S5
140
W
120
110
100
90
80
70
60
50
40
30
20
10
00
20 40 60 80 100 120 °C 160
TC
3 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
10 -1
SPP11N60S5, SPB11N60S5
SPI11N60S5
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
10 -1
tp = 0.1 ms
tp = 1 ms
DC
10
-2
10
0
10 1
10 2
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
35
20V
A
12V
10V
V 10 3
VDS
25
9V
20
10 -2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
10 -3
D = 0.01
single pulse
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
Rev. 2.1
s 10 -1
tp
Page 5
15
10
5
00
8V
7V
6V
5
10
15 VDS
25
V
2004-03-30
5 Page P-TO-262-3-1 (I2-PAK)
0...0.3
10 ±0.2
8.5 1)
A
SPP11N60S5, SPB11N60S5
SPI11N60S5
B
4.4
1.27
0.05
2.4
C
0...0.15
2 x 2.54
1.05
3 x 0.75 ±0.1
0.25 M A B C
2.4
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
0.5 ±0.1
Rev. 2.1
Page 11
2004-03-30
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet SPP11N60S5.PDF ] |
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SPP11N60S5 | Cool MOS Power Transistor | Infineon Technologies |
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