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PDF LM5111-3MX Data sheet ( Hoja de datos )
| Número de pieza | LM5111-3MX | |
| Descripción | Dual 5A Compound Gate Driver | |
| Fabricantes | National Semiconductor | |
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July 2004
LM5111
Dual 5A Compound Gate Driver
General Description
The LM5111 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and effi-
ciency. Each “compound” output driver stage includes MOS
and bipolar transistors operating in parallel that together sink
more than 5A peak from capacitive loads. Combining the
unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Under-
voltage lockout protection is also provided. The drivers can
be operated in parallel with inputs and outputs connected to
double the drive current capability. This device is available in
the SOIC-8 package.
Features
n Independently drives two N-Channel MOSFETs
n Compound CMOS and bipolar outputs reduce output
current variation
n 5A sink/3A source current capability
n Two channels can be connected in parallel to double the
drive current
n Independent inputs (TTL compatible)
n Fast propagation times (25 ns typical)
n Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF
load)
n Available in dual non-inverting, dual inverting and
combination configurations
n Supply rail under-voltage lockout protection
n Pin compatible with industry standard gate drivers
Typical Applications
n Synchronous Rectifier Gate Drivers
n Switch-mode Power Supply Gate Driver
n Solenoid and Motor Drivers
Package
n SOIC-8
Pin Configurations
SOIC-8
20112301
© 2004 National Semiconductor Corporation DS201123
www.national.com
1 page  
Electrical Characteristics (Continued)
TJ = −40˚C to +125˚C, VCC = 12V, VEE = 0V, No Load on OUT_A or OUT_B, unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max
SWITCHING CHARACTERISTICS
td1 Propagation Delay Time Low to CLOAD = 2 nF, see Figure
High, IN rising (IN to OUT)
1
25 40
td2 Propagation Delay Time High to CLOAD = 2 nF, see Figure
Low, IN falling (IN to OUT)
1
25 40
tr Rise Time
CLOAD = 2.0 nF, see Figure
1
14 25
tf Fall Time
CLOAD = 2 nF, see Figure
1
12 25
LATCHUP PROTECTION
AEC - Q100, Method 004
TJ = 150˚C
500
Units
ns
ns
ns
ns
mA
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Timing Waveforms
20112305
(a)
(b)
FIGURE 1. (a) Inverting, (b) Non-Inverting
20112306
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| PDF Descargar | [ Datasheet LM5111-3MX.PDF ] | |
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