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PDF STP36N05L Data sheet ( Hoja de datos )
| Número de pieza | STP36N05L | |
| Descripción | N-CHANNEL MOSFET TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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t4U.com STP36N05L
e STP36N05LFI
She N - CHANNEL ENHANCEMENT MODE
ta POWER MOS TRANSISTOR
w.DaTYPE
w STP36N05L
w STP36N05LFI
VDSS
50 V
50 V
RDS(on)
< 0.04 Ω
< 0.04 Ω
ID
36 A
21 A
s TYPICAL RDS(on) = 0.033 Ω
s AVALANCHE RUGGED TECHNOLOGY
ms 100% AVALANCHE TESTED
os REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
.cs HIGH CURRENT CAPABILITY
s LOGIC LEVEL COMPATIBLE INPUT
s 175oC OPERATING TEMPERATURE
Us APPLICATION ORIENTED
t4CHARACTERIZATION
APPLICATIONS
es HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
es REGULATORS
hs DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
Ss AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ataABSOLUTE MAXIMUM RATINGS
.DSymbol
Parameter
wVDS
VDGR
wVGS
wID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Value
STP36N05L
STP36N05LFI
50
50
± 15
36 21
Unit
V
V
V
A
ID Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1996
25 14
om144 144
.c120 40
U0.8 0.27
t4 2000
ee-65 to 175
www.DataSh175
A
A
W
W/oC
V
oC
oC
1/10
1 page  
Transconductance
STP36N05L/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP36N05L.PDF ] | |
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