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PDF BS616LV1011 Data sheet ( Hoja de datos )
| Número de pieza | BS616LV1011 | |
| Descripción | Very Low Power/Voltage CMOS SRAM 64K X 16 bit | |
| Fabricantes | Brilliance Semiconductor | |
| Logotipo |  |
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BSI V64eKryXL1o6wb.Pcitoowmer/Voltage CMOS SRAM BS616LV1011 FEATURES
• Wide Vcc operation voltage : 2.4 ~ 5.5V
U• Very low power consumption :
t4Vcc = 3.0V C-grade : 22mA (@55ns) operating current
eI- grade : 23mA (@55ns) operating current
eC-grade : 17mA (@70ns) operating current
hI- grade : 18mA (@70ns) operating current
0.4uA (Typ.) CMOS standby current
SVcc = 5.0V C-grade : 48mA (55ns) operating current
taI- grade : 50mA (55ns) operating current
aC-grade : 36mA (70ns) operating current
I- grade : 38mA (70ns) operating current
.D m1.3uA (Typ.) CMOS standby current
• High speed access time :
ww o-55 55ns
-70 70ns
w .c• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
DESCRIPTION
The BS616LV1011 is a high performance , very low power CMOS Static
Random Access Memory organized as 65,536 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.4uA at 3V/25oC and maximum access time of 55ns at 3V/85oC.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable(OE) and three-state output drivers.
The BS616LV1011 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1011 is available in the JEDEC standard 44-pin TSOP
Type II and 48-pin BGA package.
PRODUCT FAMILY
UPRODUCT
t4FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
(ns)
55ns:2.8~5.5V
70ns:2.5~5.5V
POWER DISSIPATION
STANDBY
Operating
(ICCSB1, Max)
(ICC, Max)
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
70ns
Vcc=3.0V
70ns
PKG TYPE
BS616LV1011EC
eBS616LV1011AC
+0 O C to +70 O C 2.4V ~ 5.5V
55/70
TSOP2-44
4uA
1.3uA
36mA
17mA
BGA-48-0608
eBS616LV1011EI
BS616LV1011AI
-40 O C to +85 O C 2.4V ~ 5.5V
55/70
TSOP2-44
8uA
2.5uA
38mA
18mA
BGA-48-0608
h PIN CONFIGURATIONS
SA4
A3
A2
A1
taA0
CE
DQ0
DQ1
DQ2
DQ3
aVCC
GND
DQ4
DQ5
DQ6
DQ7
.DWE
A15
A14
A13
A12
w omNC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
BS616LV1011EC
BS616LV1011EI
2345
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
6
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
.cA LB OE A0 A1 A2 NC
w UB IO8 UB A3 A4 CE IO0
w et4C IO9 IO10 A5 A6 IO1 IO2
eD
VSS IO11 NC
A7
IO3 VCC
ShE VCC IO12 NC NC IO4 VSS
taF
IO14 IO13 A14 A15
IO5 IO6
BLOCK DIAGRAM
A8
A13
A15
A14
A12
Address
Input
18
Row
512
A7 Buffer
A6
Decoder
A5
A4
DQ0
..
16
Data
Input
Buffer
16
..
..
16
..
Data
Output
16
DQ15
Buffer
Memory Array
512 x 2048
2048
Column I/O
Write Driver
Sense Amp
128
Column Decoder
CE
WE
OE
UB
LB
Vcc
Gnd
Control
14
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
aG IO15 NC A12 A13 WE IO7
.DH
NC A8
A9 A10 A11 NC
wwwBrilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616LV1011
1
Revision 1.0
Apr. 2004
1 page  
BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
ADDRESS
D OUT
READ CYCLE2 (1,3,4)
t OH
t AA
t RC
CE
LB,UB
D OUT
t ACS
t BA
t (5)
CLZ
t BE
READ CYCLE3 (1,4)
ADDRESS
t RC
t AA
OE
t OE
CE
LB,UB
t OLZ
t(5) ACS
t CLZ
t BA
t BE
D OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. The parameter is guaranteed but not 100% tested.
R0201-BS616LV1011
5
BS616LV1011
t OH
t tBDO
(5)
CHZ
t OH
t OHZ (5)
t (1,5)
CHZ
t BDO
Revision 1.0
Apr. 2004
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BS616LV1011.PDF ] | |
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