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PDF STS4DNF30L Data sheet ( Hoja de datos )
| Número de pieza | STS4DNF30L | |
| Descripción | Dual N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS4DNF30L
DUAL N-CHANNEL 30V - 0.039Ω - 4A SO-8
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STS4DNF30L
30 V < 0.050 Ω 4 A
s TYPICAL RDS(on) = 0.039 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGMENT IN CELLULAR PHONES
s DC MOTOR DRIVE
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C Dual Operation
(q)Pulse width limited by safe operating area.
August 2002
Value
30
30
± 16
4
2.5
16
2
Unit
V
V
V
A
A
A
W
1/6
1 page  
STS4DNF30L
DIM.
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
MIN.
0.1
0.65
0.35
0.19
0.25
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
mm
TYP.
1.27
3.81
MAX.
MIN.
1.75
0.25
0.003
1.65
0.85
0.025
0.48
0.013
0.25
0.007
0.5 0.010
45 (typ.)
5.0 0.188
6.2 0.228
4.0 0.14
1.27
0.015
0.6
8 (max.)
inch
TYP.
0.050
0.150
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
0016023
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STS4DNF30L.PDF ] | |
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