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PDF STS4DPF20L Data sheet ( Hoja de datos )
| Número de pieza | STS4DPF20L | |
| Descripción | Dual P-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS4DPF20L
DUAL P-CHANNEL 20V - 0.07 Ω - 4A SO-8
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS4DPF20L
20 V
<0.08 Ω
4A
s TYPICAL RDS(on) = 0.07 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN CELLULAR
PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
20 V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
20 V
VGS Gate- source Voltage
± 16
V
ID
Drain Current (continuos) at TC = 25°C Single Operation
Drain Current (continuos) at TC = 100°C Single Operation
4
2.5
A
A
IDM(•)
Drain Current (pulsed)
16 A
Ptot
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
1.6 W
2W
(•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
February 2002
1/8
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1 page  
Normalized Gate Threshold Voltage vs Temperature
STS4DPF20L
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS4DPF20L.PDF ] | |
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