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PDF STS4DPFS2LS Data sheet ( Hoja de datos )
| Número de pieza | STS4DPFS2LS | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS4DPFS2LS
P-CHANNEL 20V - 0.06Ω - 4A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
20 V < 0.07 Ω
SCHOTTKY
IF(AV)
VRRM
3 A 40 V
ID
4A
VF(MAX)
0.44 V
DESCRIPTION
This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
EAS (1) Single Pulse Avalanche Energy
Value
20
20
± 20
4
3.4
16
2
20
Unit
V
V
V
A
A
A
W
mJ
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRRM
Repetitive Peak Reverse Current
dv/dt
Critical Rate Of Rise Of Reverse Voltage
(•)Pulse width limited by safe operating area
(1) Starting Tj = 25°C, ID = 2.5 A, VDD = 20 V
Value
Unit
40 V
10 A
TL = 120°C
δ = 0.5
3
A
tp = 10 ms
Sinusoidal
75
A
tp = 2 µs
F = 1 kHz
1
A
10000
V/µs
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
February 2001
1/8
1 page  
Gate Charge vs Gate-source Voltage
Capacitance Variations
STS4DPFS2LS
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS4DPFS2LS.PDF ] | |
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