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PDF STS4NF100 Data sheet ( Hoja de datos )
| Número de pieza | STS4NF100 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS4NF100
N-CHANNEL 100V - 0.065 Ω - 4A SO-8
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STS4NF100
100 V <0.070 Ω
s TYPICAL RDS(on) = 0.065 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
ID
4A
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
July 2001
.
Value
100
100
± 20
4
2.5
16
2.5
Unit
V
V
V
A
A
A
W
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STS4NF100
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS4NF100.PDF ] | |
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