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PDF STS4PF20V Data sheet ( Hoja de datos )
| Número de pieza | STS4PF20V | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS4PF20V
P-CHANNEL 20V - 0.090 Ω - 4A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS4PF20V
20 V
< 0.11 Ω ( @ 4.5 V )
< 0.135 Ω ( @ 2.7 V )
4A
s TYPICAL RDS(on) = 0.090 Ω @ 4.5 V
s TYPICAL RDS(on) = 0.100 Ω @ 2.7 V
s ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s MOBILE PHONE APPLICATIONS
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
June 2002
.
Value
Unit
20 V
20 V
± 12 V
4A
2.5 A
16 A
2.5 W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STS4PF20V
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS4PF20V.PDF ] | |
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