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PDF STP30NE06LFP Data sheet ( Hoja de datos )
| Número de pieza | STP30NE06LFP | |
| Descripción | N - CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP30NE06L
® STP30NE06LFP
N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
VDSS
RDS( on )
STP30NE06L
S TP30N E06LF P
60 V
60 V
< 0.05 Ω
< 0.05 Ω
s TYPICAL RDS(on) = 0.035 Ω
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
ID
30 A
17 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
www.DataSheet4U.com
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Pa ram et er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM(•)
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
Ts tg Storage T emperature
Tj Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
March 1999
Va l u e
STP30NE06L STP30NE06LFP
60
60
± 20
30 17
21 12
120 68
80 30
0.53
0.2
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/9
1 page  
Gate Charge vs Gate-source Voltage
STP30NE06L/FP
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STP30NE06LFP.PDF ] | |
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| STP30NE06LFP | N - CHANNEL POWER MOSFET | ST Microelectronics |
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