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PDF STP3020L Data sheet ( Hoja de datos )
| Número de pieza | STP3020L | |
| Descripción | N - CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STP3020L
N - CHANNEL 30V - 0.019Ω - 40A - TO-220
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ST P3020 L
30 V < 0.022 Ω
s TYPICAL RDS(on) = 0.019 Ω
s LOW GATE CHARGE A 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
40 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-AC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
March 1999
Value
30
30
± 20
40
28
160
80
0.53
-65 to 175
175
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STP3020L
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP3020L.PDF ] | |
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