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PDF STD8N06 Data sheet ( Hoja de datos )
| Número de pieza | STD8N06 | |
| Descripción | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD8N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD8N06
VDSS
60 V
R DS( on)
< 0.25 Ω
ID
8A
s TYPICAL RDS(on) = 0.21 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
ID M(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1996
Value
60
60
± 20
8
5.6
32
35
0. 23
-65 to 175
175
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/10
1 page  
Capacitance Variations
STD8N06
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STD8N06.PDF ] | |
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| STD8N06 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | ST Microelectronics |
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