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PDF MSM56V16800E Data sheet ( Hoja de datos )
| Número de pieza | MSM56V16800E | |
| Descripción | 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM | |
| Fabricantes | OKI electronic componets | |
| Logotipo |  |
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E2G1053-18-54
¡¡SemicondSucetormiconductor
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MSM56V16800E
2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated
in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
outputs are LVTTL compatible.
FEATURES
• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 2-bank ¥ 1,048,576-word ¥ 8-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
– CAS latency (1, 2, 3)
– Burst length (1, 2, 4, 8, full page)
– Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Package:
44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800E-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM56V16800E-8
MSM56V16800E-10
Max.
Frequency
125 MHz
100 MHz
Access Time (Max.)
tAC1
tAC2
tAC3
22 ns 10 ns 6 ns
27 ns 9 ns 9 ns
1/30
1 page  
¡ Semiconductor
MSM56V16800E
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to VSS
VCC Supply Voltage
Storage Temperature
Power Dissipation
Short Circuit Current
Operating Temperature
Symbol
VIN, VOUT
VCC, VCCQ
Tstg
PD*
IOS
Topr
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VCC, VCCQ
VIH
VIL
Rating
(Voltages referenced to VSS)
Unit
–0.5 to VCC + 0.5
–0.5 to 4.5
V
V
–55 to 125
°C
600 mW
50 mA
0 to 70
°C
Min.
3.0
2.0
VSS – 2.0
(Voltages referenced to VSS = 0 V)
Typ.
Max.
Unit
3.3 3.6
V
— VCC + 2.0
V
— 0.8
V
Capacitance
Parameter
Input Capacitance (CLK)
Input Capacitance (CKE, CS,
RAS, CAS, WE, DQM, A0 - A11)
Input/Output Capacitance
(DQ1 - DQ8)
Symbol
CCLK
CIN
CI/O
Min.
2.5
2.5
4
(VCC = 1.4 V, Ta = 25°C, f = 1 MHz)
Max.
Unit
4 pF
5 pF
6.5 pF
5/30
5 Page 
¡ Semiconductor
MSM56V16800E
Single Bit Read-Write-Read Cycle (Same Page) @ CAS Latency = 2, Burst Length = 4
tCH
CLK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tCC tCL
High
CKE
CS
tHI
RAS
tSI
CAS
tSI
,,,ADDR
Ra
tHI
tSI
Ca
tHI
tSI
lCCD
tSI
Cb Cc
tHI
A11 BS BS
BS BS BS
A10
DQ
WE
,,DQM
Ra
tOLZ
tOH
tOHZ
tOWD
tAC
Qa
tHI
Db
tSI
tHI
Qc
tSI
Row Active
Write Command Precharge Command
Read Command
Read Command
11/30
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MSM56V16800E.PDF ] | |
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