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Número de pieza | SSW-108 | |
Descripción | DC-4 GHz High Isolation GaAs MMIC SPDT Switch | |
Fabricantes | Stanford Microdevices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSW-108 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Product Description
Stanford Microdevices’ SSW-108 is a high performance
Gallium Arsenide Field Effect Transistor MMIC switch
housed in a low-cost surface-mountable small outline
plastic package.
This single-pole, double-throw, non-reflective switch
consumes less than 50uA and operates at -5V and 0V for
control bias. Its high isolation and low insertion loss
makes it ideal for T/R switching in analog and digital
wireless communication systems.
The die is fabricated using 0.5 micron FET process with
gold metallization and silicon nitride passivation to achieve
excellent performance and reliability.
-20
-30
-40
dB
-50
-60
-70
DC
Isolation vs. Frequency
VControl = -5 V
1 23
GHz
4
SSW-108
DC-4 GHz High Isolation
GaAs MMIC SPDT Switch
Product Features
• High Isolation: 32dB at 2GHz
• Low DC Power Consumption
• Non-reflective
• Broadband Performance - True DC Operation
• Low Cost Small Outline Plastic Package
Applications
• Analog/Digital Wireless System
• Spread Spectrum
• GPS
Electrical Specifications at Ta = 25C
Sym bol
In s
P a ra m e te rs : T e s t C o n d itio n s
In s e rtio n L o s s
Is o l
Is o la tio n
VSW Ron
In p u t & O u tp u t V S W R
(o n o r lo w lo s s s ta te )
V S W R o ff
In p u t & O u tp u t V S W R
(o ff o r is o la te d s ta te )
P1dB
T O IP
Id
Is w
O u tp u t P o w e r a t 1 d B C o m p re s s io n
f= 0 .5 -4 .0 G H z
T h ird O rd e r In te rc e p t P o in t
f= 0 .5 -4 .0 G H z
D e v ic e C u rre n t
S w itc h in g S p e e d
5 0 % c o n tro l to 1 0 % /9 0 % R F
f = 0 .0 5 -1 .0 G H z
f = 1 .0 -2 .0 G H z
f = 2 .0 -4 .0 G H z
f = 0 .0 5 -1 .0 G H z
f = 1 .0 -2 .0 G H z
f = 2 .0 -4 .0 G H z
f = 0 .0 5 -1 .0 G H z
f = 1 .0 -2 .0 G H z
f = 2 .0 -4 .0 G H z
f = 0 .0 5 -1 .0 G H z
f = 1 .0 -2 .0 G H z
f = 2 .0 -4 .0 G H z
V = -5 V
V = -8 V
V = -5 V
V = -8 V
U n its
dB
dB
dB
dB
dB
dB
M in .
30
22
dBm
dBm
dBm
dBm
uA
nsec
Typ .
0 .8
0 .9
1 .4
40
35
25
1 .1 5
1 .2 5
1 .5 0
1 .1 5
1 .2 5
1 .5 0
+26
+29
+45
+48
40
3
M ax.
1 .3
1 .4
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
7-5
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet SSW-108.PDF ] |
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