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PDF MSG33001 Data sheet ( Hoja de datos )
| Número de pieza | MSG33001 | |
| Descripción | SiGe HBT type For low-noise RF amplifier | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
MSG33001
SiGe HBT type
For low-noise RF amplifier
■ Features
• Compatible between high breakdown voltage and high cutoff fre-
quency
• Low-noise, high-gain amplification
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature package
0.8 mm × 1.2 mm (height 0.52 mm)
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
0.10+–00..0025
Unit: mm
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
9
6
1
30
100
125
−55 to +125
V
V
V
mA
mW
°C
°C
Note) *: Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12
mm × 0.8 mm.
Marking Symbol: 5S
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open) IEBO
Forward current transfer ratio
hFE
Transition frequency
fT
Forward transfer gain
S21e2
Noise figure
NF
Collector output capacitance
(Common base, input open circuited)
Cob
Conditions
VCB = 9 V, IE = 0
VCE = 6 V, IB = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 3 mA
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCE = 3 V, IC = 3 mA, f = 2 GHz
VCB = 3 V, IE = 0, f = 1 MHz
Min Typ Max
1
1
1
100 220
19
9.0 11.0
1.4 2.0
0.3 0.6
Unit
nA
µA
µA
GHz
dB
dB
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2004
SJC00299BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MSG33001.PDF ] | |
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