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PDF MRF173CQ Data sheet ( Hoja de datos )
| Número de pieza | MRF173CQ | |
| Descripción | N-CHANNEL BROADBAND RF POWER MOSFET | |
| Fabricantes | Tyco Electronics | |
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF173CQ/D
The RF MOSFET Line
RF Power
Field Effect Transistor
N–Channel Enhancement Mode MOSFET
MRF173CQ
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
this device makes possible solid state transmitters for FM broadcast or TV
channel frequency bands.
• Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
• Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
• Excellent Thermal Stability; Suited for Class A Operation
G
D
S
MAXIMUM RATINGS
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGO
VGS
ID
PD
65 Vdc
65 Vdc
±40 Vdc
9.0 Adc
220 Watts
1.26 W/°C
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Tstg
–65 to +150
°C
TJ 200 °C
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
CASE 316–01, STYLE 2
Symbol
RθJC
Max
0.8
Min Typ Max
Unit
°C/W
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA
V(BR)DSS
65
—
—
V
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V)
IDSS — — 2.0 mA
Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V)
IGSS — — 1.0 µA
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA)
Drain–Source On–Voltage (VDS(on), VGS = 10 V, ID = 3.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.0 A)
VGS(th)
1.0
3.0
6.0
V
VDS(on)
—
— 1.4
V
gfs
1.8 2.2
— mhos
(continued)
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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DESIGN CONSIDERATIONS
The MRF173CQ is a RF MOSFET power N–channel en-
hancement mode field–effect transistor (FET) designed for
VHF power amplifier applications. M/A-COM's RF MOSFETs
feature a vertical structure with a planar design, thus avoid-
ing the processing difficulties associated with V–groove pow-
er FETs.
M/A-COM Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
The major advantages of RF power FETs include high
gain, low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control sig-
nal, thus facilitating manual gain control, ALC and modula-
tion.
DC BIAS
The MRF173CQ is an enhancement mode FET and,
therefore, does not conduct when drain voltage is ap-
plied. Drain current flows when a positive voltage is ap-
plied to the gate. See Figure 9 for a typical plot of drain
current versus gate voltage. RF power FETs require for-
ward bias for optimum performance. The value of quies-
cent drain current (IDQ) is not critical for many
applications. The MRF173CQ was characterized at IDQ =
50 mA, which is the suggested minimum value of IDQ. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of the MRF173CQ may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual gain
control, AGC/ALC and modulation systems. (see Figure 8.)
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar VHF transistors are suitable for MRF173CQ. See
M/A-COM Application Note AN721, Impedance Matching
Networks Applied to RF Power Transistors. The higher input
impedance of RF MOSFETs helps ease the task of broad-
band network design. Both small–signal scattering parame-
ters and large–signal impedances are provided. While the
s–parameters will not produce an exact design solution for
high power operation, they do yield a good first approxima-
tion. This is an additional advantage of RF MOS power FETs.
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