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PDF TSC2412 Data sheet ( Hoja de datos )
| Número de pieza | TSC2412 | |
| Descripción | General Purpose NPN Transistor | |
| Fabricantes | Taiwan Semiconductor Company | |
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TSC2412
General Purpose NPN Transistor
Pin assignment:
1. Base
2. Emitter
3. Collector
BVCEO = 50V
Ic = 150mA
VCE (SAT), = 0.2V(typ.) @Ic / Ib = 50mA / 5mA
Features
Ordering Information
Driver stage of AF amplifier.
General purpose switching application
Structure
Part No.
TSC2412CX
Packing Package
3kpcs / Reel SOT-23
Epitaxial planar type.
Complementary to TSA1037CX
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Marking
C4
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 380uS, Duty <= 2%
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Limit
60V
50V
7
150
225
+150
- 55 to +150
Unit
V
V
V
mA
mW
oC
oC
Electrical Characteristics
Ta = 25 oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
IC = 100uA, IE = 0
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 50uA, IC = 0
Collector Cutoff Current
VCB = 60V, IE = 0
Emitter Cutoff Current
VEB = 7V, IC = 0
Collector-Emitter Saturation Voltage IC / IB = 50mA / 5mA
DC Current Transfer Ratio
VCE = 6V, IC = 1mA
Transition Frequency
VCE =12V, IC=2mA, f=100MHz
Output Capacitance
VCB = 5V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)1
hFE
fT
Cob
Min
60
50
7
--
--
--
180
80
--
Typ
--
--
--
--
--
0.2
--
180
2
Max Unit
-- V
-- V
-- V
0.1 uA
0.1 uA
0.4 V
820
-- MHz
3.5 pF
Classification Of hFE
Rank
R
Range
180 - 390
Note: * is Typical
S*
270 – 560
T
410 - 820
TSC2412
1-1 2003/12 rev. A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TSC2412.PDF ] | |
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