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PDF MTP12N10E Data sheet ( Hoja de datos )
| Número de pieza | MTP12N10E | |
| Descripción | TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP12N10E/D
™Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
• Designed to Eliminate the Need for External Zener Transient
Suppressor — Absorbs High Energy in the Avalanche Mode
• Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
G
MTP12N10E
Motorola Preferred Device
®
D
TMOS POWER FET
12 AMPERES
100 VOLTS
RDS(on) = 0.16 OHM
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Single Pulse (tp ≤ 50 µs)
Drain Current — Continuous
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
ID
IDM
PD
Operating and Storage Temperature Range
TJ, Tstg
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ ≤ 175°C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, L = 4.03 mH, RG = 25 Ω, Peak IL = 12 A)
(See Figures 15, 16 and 17)
EAS
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient°
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
RθJC
RθJA
TL
CASE 221A–06, Style 5
TO–220AB
Value
100
100
± 20
± 40
12
30
79
0.53
– 55 to 175
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
290 mJ
1.9 °C/W
62.5
260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1
1 page  
COMMUTATING SAFE OPERATING AREA (CSOA)
MTP12N10E
The Commutating Safe Operating Area (CSOA) of Figure
12 defines the limits of safe operation for commutated sour-
ce-drain current versus re-applied drain voltage when the
source-drain diode has undergone forward bias. The curve
shows the limitations of IFM and peak VDS for a given rate of
change of source current. It is applicable when waveforms
similar to those of Figure 11 are present. Full or half-bridge
PWM DC motor controllers are common applications requir-
ing CSOA data.
Device stresses increase with increasing rate of change of
source current so dIs/dt is specified with a maximum value.
Higher values of dIs/dt require an appropriate derating of IFM,
peak VDS or both. Ultimately dIs/dt is limited primarily by de-
vice, package, and circuit impedances. Maximum device
stress occurs during trr as the diode goes from conduction to
reverse blocking.
VDS(pk) is the peak drain–to–source voltage that the device
must sustain during commutation; IFM is the maximum for-
ward source-drain diode current just prior to the onset of
commutation.
VR is specified at rated BVDSS to ensure that the CSOA
stress is maximized as IS decays from IRM to zero.
RGS should be minimized during commutation. TJ has only
a second order effect on CSOA.
Stray inductances in Motorola’s test circuit are assumed to
be practical minimums.
15 V
VGS
0
90%
IS
10%
VDS
IFM dls/dt
trr
ton IRM
0.25 IRM
VDS(pk)
dVDS/dt
Vf VdsL
VR
MAX. CSOA
STRESS AREA
Figure 11. Commutating Waveforms
15
12 TJ ≤ 175°C
IS = 12 A
dIs/dt ≤ 100 A/µs
9 VR ≤ 100 V
6
3
0
0 20 40 60 80 100 120 140 160 180 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 12. Commutating Safe Operating
Area (CSOA)
RGS DUT
–
VR
+
VGS
IFM
+
IS
VDS
20 V
–
Li
VR = 80% OF RATED BVDSS
VdsL = Vf + Li ⋅ dls/dt
Figure 13. Commutating Safe Operating Area
Test Circuit
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Motorola TMOS Power MOSFET Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MTP12N10E.PDF ] | |
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