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PDF STY30NA50 Data sheet ( Hoja de datos )
| Número de pieza | STY30NA50 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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STY30NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STY30NA50
V DSS
500 V
RDS(on)
< 0.175 Ω
ID
30 A
s TYPICAL RDS(on) = 0.15 Ω
s EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
s ± 30V GATE TO SOURCE VOLTAGE RATING
s REPETITIVE AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
T he Max247TM package is a new high volume
power package exibiting the same footprint as the
industry standard T O-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO -264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
PRELIMINARY DATA
Max247TM
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
Value
500
500
± 30
30
19
120
300
2.4
-55 to 150
150
Uni t
V
V
V
A
A
A
W
W/oC
oC
oC
1/4
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet STY30NA50.PDF ] | |
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