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PDF STY34NB50F Data sheet ( Hoja de datos )
| Número de pieza | STY34NB50F | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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® STY34NB50F
N - CHANNEL 500V - 0.11Ω - 34 A - Max247
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
STY34NB50F
500 V < 0.14 Ω 34 A
s TYPICAL RDS(on) = 0.11 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
3
2
1
Max247™
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM(•)
Ptot
Drain- gat e Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating F actor
dv/dt(1) Peak Diode Recovery voltage slope
Ts tg Storage Temperature
Tj Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
Un it
500 V
500 V
± 30
V
34 A
2 1 .4
A
136 A
450
3.61
W
W /o C
4 .5
-65 to 150
150
( 1) ISD ≤34 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
December 1999
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STY34NB50F
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STY34NB50F.PDF ] | |
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