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PDF STY100NS20FD Data sheet ( Hoja de datos )
| Número de pieza | STY100NS20FD | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STY100NS20FD
N-CHANNEL 200V - 0.022Ω - 100A Max247
MESH OVERLAY™ Power MOSFET
TYPE
VDSS
RDS(on)
ID
STY100NS20FD
200V < 0.024Ω 100 A
n TYPICAL RDS(on) = 0.022Ω
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n GATE CHARGE MINIMIZED
n ± 20V GATE TO SOURCE VOLTAGE RATING
n LOW INTRINSIC CAPACITANCE
n FAST BODY-DRAIN DIODE:LOW trr, Qrr
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, gives the lowest RDS(ON) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITCH MODE POWER SUPPLY (SMPS)
n DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
January 2002
Value
200
200
±20
100
63
400
450
3.6
25
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD ≤100A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
1 page  
STY100NS20FD
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STY100NS20FD.PDF ] | |
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